Datasheet > NVD5407NT4G

NVD5407NT4G

更新时间： 2024-09-25 01:20:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	82K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NVD5407NT4G 数据手册

NTD5407N, STD5407N,

NVD5407N

Power MOSFET

40 V, 38 A, Single N−Channel, DPAK

Features

• Low R

DS(on)

www.onsemi.com

• High Current Capability

• Low Gate Charge

MAX

• STD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

TYP

DS(ON)

(Note 1)

(BR)DSS

40 V

21 mꢂ @ 10 V

38 A

• These Devices are Pb−Free and are RoHS Compliant

N−Channel

Applications

• Electronic Brake Systems

• Electronic Power Steering

• Bridge Circuits

DPAK

CASE 369C

STYLE 2

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

MARKING DIAGRAM

Gate−to−Source Voltage

Continuous Drain

Current − R

= 25°C

= 100°C

= 25°C

AYWW

07NG

Steady

State

ꢀ

Power Dissipation −

Steady

State

ꢀ

= Assembly Location*

= Year

= Work Week

= Specific Device Code

= Pb−Free Device

Continuous Drain

Current R (Note 1)

Steady

State

T = 25°C

7.6

5.3

2.9

5407N

ꢀ

T = 100°C

Power Dissipation −

(Note 1)

Steady

State

T = 25°C

ꢀ

* The Assembly Location code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package, the front side assembly

code may be blank.

Pulsed Drain Current

t = 10 ꢁ s

Operating Junction and Storage Temperature

T ,

STG

−55 to

175

°C

Source Current (Body Diode)

ORDERING INFORMATION

Single Pulse Drain−to Source Avalanche

EAS

150

Device

Package

Shipping†

Energy − (V = 50 V, V = 10 V, I = 17 A,

L = 1 mH, R = 25 ꢂ)

NTD5407NT4G

DPAK

(Pb−Free)

2500 / Tape &

Reel

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

STD5407NT4G*

NVD5407NT4G*

DPAK

(Pb−Free)

2500 / Tape &

Reel

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

DPAK

(Pb−Free)

2500 / Tape &

Reel

THERMAL RESISTANCE RATINGS (Note 1)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Parameter

Junction−to−Case (Drain)

Junction−to−Ambient (Note 1)

Symbol

Max

2.0

Unit

°C/W

1. Surface mounted on FR4 board using 1 sq in pad size,

(Cu Area 1.127 sq in [2 oz] including traces).

Publication Order Number:

October, 2016 − Rev. 7

NTD5407N/D

12 3 4 5 6

中文翻译

下载PDF

与NVD5407NT4G相关器件

型号	品牌	获取价格	描述	数据表
NVD5413NT4G	ONSEMI	获取价格	功率 MOSFET，60V，30A，26mΩ，单 N 沟道，DPAK
NVD5414N	ONSEMI	获取价格	Power MOSFET 24 Amps, 60 Volts Single NâCha
NVD5414NT4G	ONSEMI	获取价格	Power MOSFET 24 Amps, 60 Volts Single NâCha
NVD5484NL	ONSEMI	获取价格	Single NâChannel Power MOSFET
NVD5484NLT4G	ONSEMI	获取价格	Single NâChannel Power MOSFET
NVD5490NL	ONSEMI	获取价格	Power MOSFET
NVD5490NL_16	ONSEMI	获取价格	Power MOSFET
NVD5490NLT4G	ONSEMI	获取价格	Power MOSFET
NVD5490NLT4G-VF01	ONSEMI	获取价格	功率 MOSFET 60V，17A，64 mΩ，单 N 沟道，DPAK，逻辑电平。
NVD5802N	ONSEMI	获取价格	Power MOSFET 40 V, Single NâChannel, 101 A

与NVD5407NT4G相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

7
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

13
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

80
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

71

产品中心

服务支持

精选活动

关于我们

帮助中心

NVD5407NT4G

NVD5407NT4G 数据手册

与NVD5407NT4G相关器件

与NVD5407NT4G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NVD5407NT4G

NVD5407NT4G 数据手册

与NVD5407NT4G相关器件

与NVD5407NT4G相关文章

您还可以找

您在本页遇到什么问题？