NTD5805N
Power MOSFET
40 V, 51 A, Single N−Channel, DPAK
Features
• Low R
DS(on)
• High Current Capability
• Avalanche Energy Specified
• These are Pb−Free Devices
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V
R
MAX
I MAX
D
(BR)DSS
DS(on)
Applications
16 mW @ 5.0 V
9.5 mW @ 10 V
40 V
51 A
• LED Backlight Driver
• CCFL Backlight
• DC Motor Control
D
• Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
G
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
S
Gate−to−Source Voltage − Continuous
V
"20
"30
V
GS
GS
N−CHANNEL MOSFET
Gate−to−Source Voltage
V
V
4
− Non−Repetitive (t < 10 mS)
p
4
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
51
36
47
A
C
D
Current (R
(Note 1)
)
q
JC
Steady
State
T
C
2
1
3
1
Power Dissipation
(R ) (Note 1)
T
C
P
W
D
2
3
q
JC
DPAK
DPAK
CASE 369C
(Surface Mount)
STYLE 2
Pulsed Drain Current
t = 10 ms
I
85
A
p
DM
CASE 369D
(Straight Lead)
STYLE 2
Operating Junction and Storage Temperature
T , T
J
−55 to
175
°C
stg
Source Current (Body Diode)
I
30
80
A
S
MARKING DIAGRAMS
& PIN ASSIGNMENT
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (V = 50 V, V = 10 V, R = 25 W,
DD
GS
G
4
I
= 40 A, L = 0.1 mH, V = 40 V)
L(pk)
DS
Drain
4
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
Drain
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
THERMAL RESISTANCE MAXIMUM RATINGS
Drain
1
3
Gate Source
Parameter
Symbol
Value
Unit
1
2
3
Gate Drain Source
Junction−to−Case (Drain)
R
3.2
°C/W
q
JC
Y
WW
= Year
= Work Week
Junction−to−Ambient − Steady State (Note 1)
R
107
q
JA
1. Surface−mounted on FR4 board using 1 in sq pad size
5805N = Device Code
G
(Cu area = 1.127 in sq [1 oz] including traces.
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
March, 2009 − Rev. 0
NTD5805N/D