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NVD5805NT4G-VF01 PDF预览

NVD5805NT4G-VF01

更新时间: 2024-11-10 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管功率场效应晶体管
页数 文件大小 规格书
6页 128K
描述
单 N 沟道,功率 MOSFET,40V,51A,9.5mΩ

NVD5805NT4G-VF01 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:,Reach Compliance Code:not_compliant
Factory Lead Time:43 weeks 1 day风险等级:5.71
JESD-609代码:e3湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NVD5805NT4G-VF01 数据手册

 浏览型号NVD5805NT4G-VF01的Datasheet PDF文件第2页浏览型号NVD5805NT4G-VF01的Datasheet PDF文件第3页浏览型号NVD5805NT4G-VF01的Datasheet PDF文件第4页浏览型号NVD5805NT4G-VF01的Datasheet PDF文件第5页浏览型号NVD5805NT4G-VF01的Datasheet PDF文件第6页 
NTD5805N  
Power MOSFET  
40 V, 51 A, Single NChannel, DPAK  
Features  
Low R  
DS(on)  
High Current Capability  
Avalanche Energy Specified  
These are PbFree Devices  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Applications  
16 mW @ 5.0 V  
9.5 mW @ 10 V  
40 V  
51 A  
LED Backlight Driver  
CCFL Backlight  
DC Motor Control  
D
Power Supply Secondary Side Synchronous Rectification  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
G
Parameter  
DraintoSource Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
S
GatetoSource Voltage Continuous  
V
"20  
"30  
V
GS  
GS  
NCHANNEL MOSFET  
GatetoSource Voltage  
V
V
4
NonRepetitive (t < 10 mS)  
p
4
Continuous Drain  
T
= 25°C  
= 100°C  
= 25°C  
I
51  
36  
47  
A
C
D
Current (R  
(Note 1)  
)
q
JC  
Steady  
State  
T
C
2
1
3
1
Power Dissipation  
(R ) (Note 1)  
T
C
P
W
D
2
3
q
JC  
DPAK  
DPAK  
CASE 369C  
(Surface Mount)  
STYLE 2  
Pulsed Drain Current  
t = 10 ms  
I
85  
A
p
DM  
CASE 369D  
(Straight Lead)  
STYLE 2  
Operating Junction and Storage Temperature  
T , T  
J
55 to  
175  
°C  
stg  
Source Current (Body Diode)  
I
30  
80  
A
S
MARKING DIAGRAMS  
& PIN ASSIGNMENT  
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
Energy (V = 50 V, V = 10 V, R = 25 W,  
DD  
GS  
G
4
I
= 40 A, L = 0.1 mH, V = 40 V)  
L(pk)  
DS  
Drain  
4
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
260  
°C  
Drain  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
THERMAL RESISTANCE MAXIMUM RATINGS  
Drain  
1
3
Gate Source  
Parameter  
Symbol  
Value  
Unit  
1
2
3
Gate Drain Source  
JunctiontoCase (Drain)  
R
3.2  
°C/W  
q
JC  
Y
WW  
= Year  
= Work Week  
JunctiontoAmbient Steady State (Note 1)  
R
107  
q
JA  
1. Surfacemounted on FR4 board using 1 in sq pad size  
5805N = Device Code  
G
(Cu area = 1.127 in sq [1 oz] including traces.  
= PbFree Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
March, 2009 Rev. 0  
NTD5805N/D  
 

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