Datasheet > NV25010DTVLT3G

NV25010DTVLT3G

更新时间： 2024-09-10 11:12:07

品牌	Logo	应用领域
安森美 - ONSEMI		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
14页	324K
描述
EEPROM 串行 1-Kb SPI - 汽车级 1 (+125°C)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NV25010DTVLT3G 数据手册

NV25010LV, NV25020LV,

NV25040LV

EEPROM Serial 1/2/4-Kb SPI

Low Voltage Automotive

Grade 1

www.onsemi.com

Description

NV25010LV, NV25020LV and NV25040LV are EEPROM Serial

1/2/4−Kb SPI Low Voltage Automotive Grade 1 devices internally

organized as 128x8, 256x8 and 512x8 bits. They feature a 16−byte

page write buffer and support the Serial Peripheral Interface (SPI)

protocol. The devices are enabled through a Chip Select (CS) input. In

addition, the required bus signals are clock input (SCK), data input

(SI) and data output (SO) lines. The HOLD input may be used to pause

any serial communication with the NV250x0 device. The device

features software and hardware write protection, including partial as

well as full array protection. Byte Level On−Chip ECC (Error

Correction Code) makes the device suitable for high reliability

applications. The device offers an additional Identification Page which

can be permanently write protected.

UDFN8

SOIC−8

DW SUFFIX

CASE 751BD

MUW3 SUFFIX

CASE 517DH

TSSOP−8

DT SUFFIX

CASE 948AL

US8

UV SUFFIX

CASE 493

PIN CONFIGURATION

HOLD

SCK

Features

• Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified

• 1.7 V to 5.5 V Supply Voltage Range

• 20 / 10 MHz SPI Compatible

SOIC (DW), TSSOP (DT), UDFN (MUW3)

• SPI Modes (0,0) & (1,1)

• 16−byte Page Write Buffer

• Self−timed Write Cycle

NV250x0LV

• Hardware and Software Protection

• Additional Identification Page with Permanent Write Protection

HOLD

SCK

• NV Prefix for Automotive and Other Applications Requiring Site and

Change Control

• Block Write Protection

Figure 1. Functional Symbol

− Protect / , / or Entire EEPROM Array

• Low Power CMOS Technology

PIN FUNCTION

• Program/Erase Cycles:

Pin Name

Function

Chip Select

− 4,000,000 at 25°C

− 1,200,000 at +85°C

− 600,000 at +125°C

Serial Data Output

Write Protect

• 200 Year Data Retention

• SOIC, TSSOP, US 8−lead & Wettable Flank UDFN 8−pad Packages

• This Device is Pb−Free, Halogen Free/BFR Free, and RoHS

Compliant

Ground

Serial Data Input

Serial Clock

SCK

HOLD

Hold Transmission Input

Power Supply

ORDERING INFORMATION

See detailed ordering and shipping information on page 11 of

this data sheet.

Publication Order Number:

March, 2019 − Rev. 2

NV25010LV/D

12 3 4 5 6 7...14

中文翻译

下载PDF

与NV25010DTVLT3G相关器件

型号	品牌	获取价格	描述	数据表
NV25010DWHFT3G	ONSEMI	获取价格	EEPROM Serial 1/2/4-Kb SPI
NV25010DWVLT3G	ONSEMI	获取价格	EEPROM 串行 1-Kb SPI - 汽车级 1 (+125°C)
NV25010MUW3VTBG	ONSEMI	获取价格	EEPROM Serial 1/2/4-Kb SPI
NV25010WF	ONSEMI	获取价格	EEPROM Serial 1/2/4-Kb SPI
NV25020	ONSEMI	获取价格	EEPROM Serial 1/2/4-Kb SPI
NV25020DTHFT3G	ONSEMI	获取价格	EEPROM Serial 1/2/4-Kb SPI
NV25020DTVLT3G	ONSEMI	获取价格	EEPROM Serial 2-Kb SPI - Automotive Grade 1 (
NV25020DWHFT3G	ONSEMI	获取价格	EEPROM Serial 1/2/4-Kb SPI
NV25020DWVLT3G	ONSEMI	获取价格	EEPROM Serial 2-Kb SPI - Automotive Grade 1 (
NV25020MUW3VTBG	ONSEMI	获取价格	EEPROM Serial 1/2/4-Kb SPI

与NV25010DTVLT3G相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

64
AIC1781A 电池充电控制器深度解析
2024-09-03

52
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

85
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

96

产品中心

服务支持

精选活动

关于我们

帮助中心

NV25010DTVLT3G

NV25010DTVLT3G 数据手册

与NV25010DTVLT3G相关器件

与NV25010DTVLT3G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NV25010DTVLT3G

NV25010DTVLT3G 数据手册

与NV25010DTVLT3G相关器件

与NV25010DTVLT3G相关文章

您还可以找

您在本页遇到什么问题？