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NUP1301U,115 PDF预览

NUP1301U,115

更新时间: 2024-11-23 18:59:27
品牌 Logo 应用领域
恩智浦 - NXP 局域网光电二极管
页数 文件大小 规格书
14页 144K
描述
NUP1301U - Ultra low capacitance ESD protection array SC-70 3-Pin

NUP1301U,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-70包装说明:PLASTIC, SC-70, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:8.01最小击穿电压:100 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE最大正向电压 (VF):0.715 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:200 W
最大非重复峰值正向电流:4 A元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.215 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
最大重复峰值反向电压:80 V子类别:Rectifier Diodes
表面贴装:YES技术:AVALANCHE
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

NUP1301U,115 数据手册

 浏览型号NUP1301U,115的Datasheet PDF文件第2页浏览型号NUP1301U,115的Datasheet PDF文件第3页浏览型号NUP1301U,115的Datasheet PDF文件第4页浏览型号NUP1301U,115的Datasheet PDF文件第5页浏览型号NUP1301U,115的Datasheet PDF文件第6页浏览型号NUP1301U,115的Datasheet PDF文件第7页 
NUP1301U  
T323  
SO  
Ultra low capacitance ESD protection array  
Rev. 1 — 28 January 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a small  
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package designed to  
protect one signal line in rail-to-rail configuration from the damage caused by  
ESD and other transients.  
1.2 Features and benefits  
ESD protection of one signal line (rail-to-rail configuration)  
Ultra low diode capacitance: Cd = 0.6 pF  
ESD protection up to 30 kV  
IEC 61000-4-2; level 4 (ESD)  
IEC 61000-4-5 (surge); IPP = 11 A  
AEC-Q101 qualified  
1.3 Applications  
Telecommunication networks  
Video line protection  
Microcontroller protection  
I2C-bus protection  
Antenna power supply  
Analog audio  
Class-D amplifier  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 C unless otherwise specified.  
Symbol  
Per diode  
VRRM  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
repetitive peak reverse  
voltage  
-
-
-
-
80  
V
Cd  
IR  
diode capacitance  
f = 1 MHz;  
VR = 0 V  
0.6  
-
0.75  
100  
pF  
nA  
reverse current  
VR = 80 V  
 
 
 
 
 

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