Datasheet > NTUD3128N

NTUD3128N

更新时间： 2024-11-25 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	82K
描述
Small Signal MOSFET 20 V, 200 mA, Dual N-Channel, 1.0 mm x 1.0 mm SOT-963 Package

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NTUD3128N 数据手册

NTUD3128N

Small Signal MOSFET

20 V, 200 mA, Dual N-Channel, 1.0 mm x

1.0 mm SOT-963 Package

Features

http://onsemi.com

•ꢀDual N-Channel MOSFET

•ꢀOffers a Low R

Solution in the Ultra Small 1.0 x 1.0 mm

DS(ON)

MAX

I Max

(BR)DSS

DS(ON)

Package

3.0 W @ 4.5 V

4.0 W @ 2.5 V

•ꢀ1.5 V Gate Voltage Rating

20 V

0.2 A

•ꢀUltra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely

Thin Environments such as Portable Electronics

•ꢀThese are Pb-Free Devices

6.0 W @ 1.8 V

10 W @ 1.5 V

Applications

•ꢀGeneral Purpose Interfacing Switch

•ꢀOptimized for Power Management in Ultra Portable Equipment

MAXIMUM RATINGS (T = 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol Value Unit

N-Channel

MOSFET

DSS

Gate-to-Source Voltage

Continuous Drain

Current (Note 1)

T = 25°C

160

115

200

125

PINOUT: SOT-963

Steady

State

T = 85°C

t v 5 s

T = 25°C

Power Dissipation

(Note 1)

Steady

State

T = 25°C

t v 5 s

200

800

Pulsed Drain Current

t = 10 ms

Operating Junction and Storage Temperature

T ,

-55 to

150

°C

STG

Source Current (Body Diode) (Note 2)

200

260

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

Top View

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using the minimum recommended pad size,

1 oz Cu.

MARKING

DIAGRAM

N MꢀG

SOT-963

CASE 527AA

2. Pulse Test: pulse width v300 ms, duty cycle v2%

= Specific Device Code

= Date Code

= Pb-Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

June, 2007 - Rev. 0

Publication Order Number:

NTUD3127C/D

12 3 4 5

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与NTUD3128N相关器件

型号	品牌	获取价格	描述	数据表
NTUD3128NT5G	ONSEMI	获取价格	Small Signal MOSFET 20 V, 200 mA, Dual N-Channel, 1.0 mm x 1.0 mm SOT-963 Package
NTUD3129P	ONSEMI	获取价格	Small Signal MOSFET -20 V, -180 mA, Dual P-Channel, 1.0 x 1.0 mm SOT-963 Package
NTUD3129PT5G	ONSEMI	获取价格	Small Signal MOSFET -20 V, -180 mA, Dual P-Channel, 1.0 x 1.0 mm SOT-963 Package
NTUD3169CZ	ONSEMI	获取价格	Small Signal MOSFET 20 V, 220 mA / −200 mA, Complementary, 1.0 x 1.0 mm SOT−96
NTUD3169CZT5G	ONSEMI	获取价格	Small Signal MOSFET 20 V, 220 mA / −200 mA, Complementary, 1.0 x 1.0 mm SOT−96
NTUD3170NZ	ONSEMI	获取价格	Small Signal MOSFET 20 V, 220 mA, Dual N−Channel, 1.0 mm x 1.0 mm SOT−963 Pack
NTUD3170NZT5G	ONSEMI	获取价格	Small Signal MOSFET 20 V, 220 mA, Dual N−Channel, 1.0 mm x 1.0 mm SOT−963 Pack
NTUD3171PZ	ONSEMI	获取价格	Small Signal MOSFET −20 V, −200 mA, Dual P−Channel, 1.0 x 1.0 mm SOTW
NTUD3171PZT5G	ONSEMI	获取价格	Small Signal MOSFET −20 V, −200 mA, Dual P−Channel, 1.0 x 1.0 mm SOTW
NTV	CANDD	获取价格	3kVDC Isolated 1W Dual Output SM DC-DC Converters

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