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NTUD3171PZ

更新时间： 2024-11-14 06:00:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 104K
描述
Small Signal MOSFET −20 V, −200 mA, Dual P−Channel, 1.0 x 1.0 mm SOT−963 Package

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NTUD3171PZ 数据手册

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NTUD3171PZ  
Small Signal MOSFET  
−20 V, −200 mA, Dual P−Channel,  
1.0 x 1.0 mm SOT−963 Package  
Features  
http://onsemi.com  
• Dual P−Channel MOSFET  
• Offers a Low R  
Solution in the Ultra Small 1.0 x 1.0 mm  
DS(on)  
V
R
MAX  
I Max  
D
(BR)DSS  
DS(ON)  
Package  
5.0 W @ −4.5 V  
6.0 W @ −2.5 V  
• 1.5 V Gate Voltage Rating  
• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely  
Thin Environments such as Portable Electronics.  
• This is a Pb−Free Device  
−20 V  
−0.2 A  
7.0 W @ −1.8 V  
10 W @ −1.5 V  
D1  
D2  
Applications  
• High Side Switch  
• High Speed Interfacing  
• Optimized for Power Management in Ultra Portable Equipment  
G1  
G2  
MAXIMUM RATINGS (T = 25°C unless otherwise specified)  
J
P−Channel  
MOSFET  
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
S1  
S2  
V
DSS  
−20  
8
V
V
Gate−to−Source Voltage  
V
GS  
PINOUT: SOT−963  
Continuous Drain  
Current (Note 1)  
T = 25°C  
−200  
−140  
−250  
−125  
A
Steady  
State  
T = 85°C  
A
I
mA  
D
S
1
2
3
6
5
D
1
1
t v 5 s  
T = 25°C  
A
Power Dissipation  
(Note 1)  
Steady  
State  
G
G
2
T = 25°C  
A
P
mW  
1
D
t v 5 s  
−200  
−600  
Pulsed Drain Current  
t = 10 ms  
p
I
mA  
DM  
4
S
2
D
2
Operating Junction and Storage Temperature  
T ,  
STG  
−55 to  
150  
°C  
J
T
Source Current (Body Diode) (Note 2)  
I
S
−200  
mA  
Top View  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
260  
°C  
T
L
MARKING  
DIAGRAM  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using the minimum recommended pad size,  
1 oz Cu.  
SOT−963  
CASE 527AD  
4 M G  
1
2. Pulse Test: pulse width v300 ms, duty cycle v2%  
4
= Specific Device Code  
M
G
= Date Code  
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
August, 2008 − Rev. 0  
NTUD3171PZ/D  
 
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