NTND31200PZ
Small Signal MOSFET
−20 V, −127 mA, Dual P−Channel,
0.65 mm x 0.90 mm x 0.4 mm XLLGA6
Package
www.onsemi.com
Features
• Dual P−Channel MOSFET
V
R
MAX
I Max
D
(BR)DSS
DS(ON)
• Offers a Low R
Solution in the Ultra Small
DS(ON)
5.0 W @ −4.5 V
6.0 W @ −2.5 V
7.0 W @ −1.8 V
10.0 W @ −1.5 V
0.65 mm × 0.90 mm Package
−20 V
−127 mA
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
P−Channel MOSFET
• Small Signal Load Switch
• Analog Switch
S1
S2
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Products
G1
G2
MAXIMUM RATINGS (T = 25°C unless otherwise specified)
J
Parameter
Drain-to-Source Voltage
Symbol Value Unit
D1
D2
V
DSS
−20
8
V
V
Gate-to-Source Voltage
V
GS
Continuous Drain
Current (Note 1)
Steady
State
T = 25°C
I
−127
−91
−146
125
mA
A
D
T = 85°C
A
XLLGA6
Case 713AC
t ≤ 5 s
T = 25°C
A
Power Dissipation
(Note 1)
Steady
State
T = 25°C
A
P
mW
D
PINOUT DIAGRAM
t ≤ 5 s
166
S1
G1
1
2
6
D1
Pulsed Drain Current
t = 10 ms
p
I
−488
mA
DM
Operating Junction and Storage Temperature
T ,
−55 to
150
°C
J
T
STG
5
4
G2
Source Current (Body Diode) (Note 2)
I
S
−200
260
mA
D2
(Bottom View)
3
Lead Temperature for Soldering Purposes
T
°C
L
S2
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface-mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
MARKING DIAGRAM
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
E M
1
E
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
November, 2015 − Rev. 0
NTND31200PZ/D