5秒后页面跳转
NTNS3A91PZT5G PDF预览

NTNS3A91PZT5G

更新时间: 2024-10-02 12:22:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
3页 99K
描述
Small Signal MOSFET .20 V, .214 mA, Single P.Channel, 0.62 x 0.62 x 0.4 mm XLLGA3 Package

NTNS3A91PZT5G 数据手册

 浏览型号NTNS3A91PZT5G的Datasheet PDF文件第2页浏览型号NTNS3A91PZT5G的Datasheet PDF文件第3页 
NTNS3A91PZ  
Advance Information  
Small Signal MOSFET  
20 V, 214 mA, Single PChannel,  
0.62 x 0.62 x 0.4 mm XLLGA3 Package  
Features  
http://onsemi.com  
MOSFET  
Single PChannel MOSFET  
Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm)  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Low R  
Solution in 0.62 x 0.62 mm Package  
DS(on)  
1.6 W @ 4.5 V  
2.4 W @ 2.5 V  
3.3 W @ 1.8 V  
4.5 W @ 1.5 V  
1.5 V Gate Voltage Rating  
20 V  
214 mA  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
Applications  
Small Signal Load Switch  
Analog Switch  
PChannel MOSFET  
D (3)  
High Speed Interfacing  
Optimized for Power Management in Ultra Portable Products  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
G (1)  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Symbol  
Value  
20  
Units  
V
V
DSS  
S (2)  
V
GS  
8.0  
V
MARKING  
DIAGRAM  
Continuous Drain  
Current (Note 1)  
Steady  
T = 25°C  
I
214  
155  
277  
125  
mA  
A
D
State  
T = 85°C  
A
1
3
t 5 s  
T = 25°C  
A
XLLGA3  
CASE 713AA  
X M  
2
Power Dissipa-  
tion (Note 1)  
Steady  
State  
T = 25°C  
A
P
mW  
D
1
X
= Specific Device Code  
t 5 s  
T = 25°C  
208  
A
M = Date Code  
Pulsed Drain Current  
t = 10 ms  
p
I
643  
mA  
DM  
Operating Junction and Storage  
Temperature  
T ,  
STG  
-55 to  
150  
°C  
J
T
ORDERING INFORMATION  
Source Current (Body Diode) (Note 2)  
I
208  
mA  
S
Device  
NTNS3A91PZT5G  
Package  
Shipping  
8000 /  
Tape & Reel  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
260  
°C  
L
XLLGA3  
(PbFree)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
1000  
600  
Units  
Junction-to-Ambient – Steady State (Note 1)  
Junction-to-Ambient – t 5 s (Note 1)  
R
°C/W  
θJA  
R
θJA  
1. Surface Mounted on FR4 Board using the minimum recommended pad size,  
2
(or 2 mm ), 1 oz Cu.  
2. Pulse Test: pulse width 300 ms, duty cycle 2%.  
This document contains information on a new product. Specifications and information  
herein are subject to change without notice.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
June, 2012 Rev. P2  
NTNS3A91PZ/D  
 

与NTNS3A91PZT5G相关器件

型号 品牌 获取价格 描述 数据表
NTNS3C68NZ ONSEMI

获取价格

Small Signal MOSFET
NTNS3C68NZ_16 ONSEMI

获取价格

Small Signal MOSFET
NTNS3C68NZT5G ONSEMI

获取价格

Small Signal MOSFET
NTNS3C94NZ ONSEMI

获取价格

Small Signal MOSFET
NTNS3C94NZ_16 ONSEMI

获取价格

Small Signal MOSFET
NTNS3C94NZT5G ONSEMI

获取价格

Small Signal MOSFET
NTNS41006PZ ONSEMI

获取价格

Small Signal MOSFET
NTNS41006PZTCG ONSEMI

获取价格

Small Signal MOSFET
NTNS4C69N ONSEMI

获取价格

Small Signal MOSFET
NTNS4C69N_17 ONSEMI

获取价格

Small Signal MOSFET