NTNS3C94NZ
Small Signal MOSFET
12 V, 384 mA, Single N−Channel,
0.62 x 0.62 x 0.4 mm XLLGA3 Package
Features
• Single N−Channel MOSFET
www.onsemi.com
MOSFET
• Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm)
• Low R
Solution in 0.62 x 0.62 mm Package
DS(on)
• 1.8 V Gate Voltage Rating
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
0.48 W @ 4.5 V
0.54 W @ 3.7 V
0.60 W @ 3.3 V
0.80 W @ 2.5 V
1.90 W @ 1.8 V
Compliant
Applications
12 V
384 mA
• Small Signal Load Switch
• Analog Switch
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Products
N−Channel MOSFET
D (3)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
Value
12
Units
V
V
DSS
V
GS
8
V
G (1)
Continuous Drain
Current (Note 1)
Steady
State
T = 25°C
I
384
277
413
120
mA
A
D
T = 85°C
A
S (2)
t ≤ 5 s
T = 25°C
A
Power Dissipa-
tion (Note 1)
Steady
State
T = 25°C
A
P
mW
D
MARKING
DIAGRAM
t ≤ 5 s
T = 25°C
140
115
A
1
3
XLLGA3
CASE 713AE
Pulsed Drain Current
t = 10 ms
p
I
A
E M
DM
2
Operating Junction and Storage
Temperature
T ,
-55 to
150
°C
J
1
T
STG
E
= Specific Device Code
Source Current (Body Diode) (Note 2)
I
157
260
mA
S
M = Date Code
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
Package
Shipping
8000 /
Tape & Reel
THERMAL RESISTANCE RATINGS
NTNS3C94NZT5G
XLLGA3
(Pb−Free)
Parameter
Symbol
Max
1040
900
Units
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t ≤ 5 s (Note 1)
R
°C/W
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
θJA
R
θJA
1. Surface Mounted on FR4 Board using the minimum recommended pad size,
2
(or 2 mm ), 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
December, 2016 − Rev. 1
NTNS3C94NZ/D