Datasheet > NTNS3164NZ

NTNS3164NZ

更新时间： 2024-10-02 12:01:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	125K
描述
Small Signal MOSFET 20 V, 361 mA, Single N.Channel, SOT.883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

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NTNS3164NZ 数据手册

NTNS3164NZ

Small Signal MOSFET

20 V, 361 mA, Single N−Channel, SOT−883

(XDFN3) 1.0 x 0.6 x 0.4 mm Package

Features

http://onsemi.com

• Single N−Channel MOSFET

• Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for

MAX

I Max

(BR)DSS

DS(on)

Extremely Thin Environments Such as Portable Electronics

0.7 W @ 4.5 V

• Low R

Solution in the Ultra Small 1.0 x 0.6 mm Package

• 1.5 V Gate Drive

DS(on)

1.0 W @ 2.5 V

2.0 W @ 1.8 V

361 mA

20 V

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

4.0 W @ 1.5 V

Applications

• High Side Switch

• High Speed Interfacing

• Level Shift and Translate

• Optimized for Power Management in Ultra Portable Solutions

N−CHANNEL MOSFET

D (3)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Unit

G (1)

DSS

Continuous Drain

Current (Note 1)

Steady

T = 25°C

361

260

427

155

State

T = 85°C

t ≤ 5 s

T = 25°C

S (2)

Power Dissipation

(Note 1)

Steady

State

T = 25°C

t ≤ 5 s

217

MARKING DIAGRAM

Pulsed Drain

Current

t = 10 ms

1082

64 M

Operating Junction and Storage

Temperature

T , T

−55 to

150

°C

STG

SOT−883 (XDFN3)

CASE 506CB

Source Current (Body Diode) (Note 2)

129

260

= Specific Device Code

= Date Code

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

1. Surface−mounted on FR4 board using the minimum recommended pad size,

†

Device

Package

Shipping

or 2 mm , 1 oz Cu.

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

NTNS3164NZT5G SOT−883

(Pb−Free)

8000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

March, 2013 − Rev. 0

NTNS3164NZ/D

12 3 4 5 6

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NTNS3164NZT5G	ONSEMI	获取价格	20 V, 245 mA, Single N.Channel, SOT.883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
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NTNS3A91PZT5G	ONSEMI	获取价格	Small Signal MOSFET .20 V, .214 mA, Single P.Channel, 0.62 x 0.62 x 0.4 mm XLLGA3 Package
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