Datasheet > NTNS3A65PZ

NTNS3A65PZ

更新时间： 2024-10-02 12:22:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	123K
描述
â20 V, â281 mA, Single PâChannel, SOTâ883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

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NTNS3A65PZ 数据手册

NTNS3A65PZ

Small Signal MOSFET

−20 V, −281 mA, Single P−Channel,

SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm

Package

http://onsemi.com

Features

• Single P−Channel MOSFET

• Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for

MAX

I Max

(BR)DSS

DS(on)

Extremely Thin Environments Such as Portable Electronics

1.3 W @ −4.5 V

• Low R

Solution in the Ultra Small 1.0 x 0.6 mm Package

• 1.5 V Gate Drive

DS(on)

2.0 W @ −2.5 V

3.4 W @ −1.8 V

−281 mA

−20 V

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

4.5 W @ −1.5 V

Applications

• High Side Switch

• High Speed Interfacing

P−CHANNEL MOSFET

• Optimized for Power Management in Ultra Portable Solutions

S (2)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

−20

Unit

DSS

G (1)

Continuous Drain

Current (Note 1)

Steady

T = 25°C

−281

−202

−332

155

State

T = 85°C

t ≤ 5 s

T = 25°C

D (3)

Power Dissipation

(Note 1)

Steady

State

T = 25°C

t ≤ 5 s

218

MARKING

DIAGRAM

Pulsed Drain

Current

t = 10 ms

−842

SOT−883 (XDFN3)

CASE 506CB

Operating Junction and Storage

Temperature

T , T

−55 to

150

°C

STG

65 M

Source Current (Body Diode) (Note 2)

−130

= Specific Device Code

= Date Code

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

†

Device

Package

Shipping

1. Surface−mounted on FR4 board using the minimum recommended pad size,

or 2 mm , 1 oz Cu.

NTNS3A65PZT5G SOT−883

(Pb−Free)

8000 / Tape &

Reel

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

September, 2012 − Rev. 0

NTNS3A65PZ/D

12 3 4 5 6

中文翻译

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与NTNS3A65PZ相关器件

型号	品牌	获取价格	描述	数据表
NTNS3A65PZT5G	ONSEMI	获取价格	â20 V, â281 mA, Single PâChannel, SOTâ
NTNS3A91PZ	ONSEMI	获取价格	Small Signal MOSFET .20 V, .214 mA, Single P.Channel, 0.62 x 0.62 x 0.4 mm XLLGA3 Package
NTNS3A91PZT5G	ONSEMI	获取价格	Small Signal MOSFET .20 V, .214 mA, Single P.Channel, 0.62 x 0.62 x 0.4 mm XLLGA3 Package
NTNS3C68NZ	ONSEMI	获取价格	Small Signal MOSFET
NTNS3C68NZ_16	ONSEMI	获取价格	Small Signal MOSFET
NTNS3C68NZT5G	ONSEMI	获取价格	Small Signal MOSFET
NTNS3C94NZ	ONSEMI	获取价格	Small Signal MOSFET
NTNS3C94NZ_16	ONSEMI	获取价格	Small Signal MOSFET
NTNS3C94NZT5G	ONSEMI	获取价格	Small Signal MOSFET
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