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NTHL082N65S3F PDF预览

NTHL082N65S3F

更新时间: 2023-09-03 20:36:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 438K
描述
功率 MOSFET,N 沟道,SUPERFET® III,FRFET®,650 V,40 A,82 mΩ,TO-247

NTHL082N65S3F 数据手册

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NTHL082N65S3F  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
OFF CHARACTERISTICS  
BV  
Drain to Source Breakdown Voltage  
650  
700  
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C  
DSS  
GS  
D
J
= 0 V, I = 1 mA, T = 150_C  
GS  
D
J
DBV  
/ DT  
Breakdown Voltage Temperature  
Coefficient  
= 10 mA, Referenced to 25_C  
0.7  
V/_C  
DSS  
J
D
I
Zero Gate Voltage Drain Current  
V
DS  
V
DS  
V
GS  
= 650 V, V = 0 V  
124  
10  
mA  
DSS  
GS  
= 520 V, T = 125_C  
C
I
Gate to Body Leakage Current  
=
30 V, V = 0 V  
100  
nA  
GSS  
DS  
ON CHARACTERISTICS  
V
Gate Threshold Voltage  
V
GS  
V
GS  
V
DS  
= V , I = 1.0 mA  
3.0  
5.0  
82  
V
mW  
S
GS(th)  
DS(on)  
DS  
D
R
Static Drain to Source On Resistance  
Forward Transconductance  
= 10 V, I = 20 A  
70  
24  
D
g
FS  
= 20 V, I = 20 A  
D
DYNAMIC CHARACTERISTICS  
C
Input Capacitance  
V
= 400 V, V = 0 V, f = 1 MHz  
3410  
70  
pF  
pF  
pF  
pF  
nC  
nC  
nC  
W
iss  
DS  
GS  
C
Output Capacitance  
oss  
C
Effective Output Capacitance  
Energy Related Output Capacitance  
Total Gate Charge at 10 V  
Gate to Source Gate Charge  
Gate to Drain “Miller” Charge  
Equivalent Series Resistance  
V
DS  
V
DS  
V
DS  
= 0 V to 400 V, V = 0 V  
722  
126  
81  
oss(eff.)  
GS  
C
= 0 V to 400 V, V = 0 V  
GS  
oss(er.)  
Q
= 400 V, I = 20 A, V = 10 V  
D GS  
g(tot)  
(Note 4)  
Q
24  
gs  
Q
32  
gd  
ESR  
f = 1 MHz  
1.9  
SWITCHING CHARACTERISTICS  
t
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
V
= 400 V, I = 20 A, V = 10 V  
27  
27  
79  
5
ns  
ns  
ns  
ns  
d(on)  
DD  
g
D
GS  
R = 3 W  
t
r
(Note 4)  
t
d(off)  
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS  
I
Maximum Continuous Source to Drain Diode Forward Current  
Maximum Pulsed Source to Drain Diode Forward Current  
40  
100  
1.3  
A
A
S
I
SM  
V
SD  
Source to Drain Diode Forward Voltage  
Reverse Recovery Time  
V
V
= 0 V, I = 20 A  
V
GS  
SD  
t
rr  
= 0 V, I = 20 A,  
108  
410  
ns  
nC  
GS  
SD  
dI /dt = 100 A/ms  
F
Q
Reverse Recovery Charge  
rr  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. Essentially independent of operating temperature typical characteristics.  
www.onsemi.com  
3
 

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