Datasheet > NTHL082N65S3F

NTHL082N65S3F

更新时间： 2023-09-03 20:36:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	438K
描述
功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，40 A，82 mΩ，TO-247

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NTHL082N65S3F 数据手册

NTHL082N65S3F

TYPICAL PERFORMANCE CHARACTERISTICS (continued)

1.2

1.1

1.0

0.9

0.8

3.0

= 0 V

= 10 mA

= 10 V

= 20 A

2.5

2.0

1.5

1.0

0.5

0.0

−50

100

150

−50

100

150

T , Junction Temperature (5C)

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On−Resistance Variation

vs. Temperature

200

100

30 ms

100 ms

10 ms 1 ms

Operation in this Area

is Limited by R

DS(on)

= 25°C

T = 150°C

Single Pulse

0.1

150

100

1000

100

125

T , Case Temperature (5C)

, Drain−Source Voltage (V)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

130

260

390

520

650

, Drain to Source Voltage (V)

Figure 11. E_OSSvs. Drain to Source Voltage

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1 2 3 456 7 8...10

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