Datasheet > NTHL082N65S3F

NTHL082N65S3F

更新时间： 2023-09-03 20:36:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	438K
描述
功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，40 A，82 mΩ，TO-247

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NTHL082N65S3F 数据手册

NTHL082N65S3F

ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)

Symbol

Parameter

NTHL082N65S3F

Unit

DSS

GSS

Drain to Source Voltage

Gate to Source Voltage

650

− DC

− AC (f > 1 Hz)

Drain Current

− Continuous (T = 25°C)

− Continuous (T = 100°C)

25.5

100

Drain Current

− Pulsed (Note 1)

Single Pulsed Avalanche Energy (Note 2)

Avalanche Current (Note 2)

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

510

4.8

3.13

100

V/ns

dv/dt

Peak Diode Recovery dv/dt (Note 3)

Power Dissipation

(T = 25°C)

313

W/°C

°C

− Derate Above 25°C

2.5

T , T

Operating and Storage Temperature Range

−55 to +150

300

STG

Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I = 4.8 A, R = 25 W, starting T = 25°C.

3. I ≤ 20 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.

THERMAL CHARACTERISTICS

Symbol

Parameter

NTHL082N65S3F

Unit

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

0.4

_C/W

PACKAGE MARKING AND ORDERING INFORMATION

Part Number

Top Marking

Package

Packing Method

Reel Size

N/A

Tape Width

Quantity

NTHL082N65S3F

TO−247

Tube

N/A

30 Units

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123 4 5 6 7...10

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