Datasheet > NTHL022N120M3S

NTHL022N120M3S

更新时间： 2023-09-03 20:40:21

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	309K
描述
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-3L

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DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

MOSFET – EliteSiC,

22 mohm, 1200ꢀV, M3S,

TO-247-3L

MAX

I MAX

(BR)DSS

DS(ON)

1200 V

30 mꢀ @ 18 V

89 A

N−CHANNEL MOSFET

NTHL022N120M3S

Features

• Typ. R

= 22 mꢀ @ V = 18 V

DS(on)

• Ultra Low Gate Charge (Q

= 137 nC)

G(tot)

• Low Effective Output Capacitance (C = 146 pF)

oss

• 100% Avalanche Tested

• This Device is Halide Free and RoHS Compliant with Exemption 7a,

Pb−Free 2LI (on second level interconnection)

Typical Applications

• Solar Inverters

• Electric Vehicle Charging Stations

• UPS (Uninterruptible Power Supplies)

• Energy Storage Systems

TO−247−3L

CASE 340CX

• SMPS (Switch Mode Power Supplies)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

1200

Unit

MARKING DIAGRAM

DSS

Gate−to−Source Voltage

−10/+22

−3/+18

Recommended Operation Values

of Gate−to−Source Voltage

< 175°C

= 25°C

GSop

Steady

State

Continuous Drain

Current (Notes 1, 3)

348

HL022N

120M3S

AYWWZZ

Power Dissipation

(Note 1)

Steady

State

= 100°C

Continuous Drain

Current (Notes 1, 3)

Power Dissipation

(Note 1)

174

275

HL022N120M3S = Specific Device Code

Pulsed Drain Current

(Note 2)

= 25°C

= Assembly Location

= Year

WW = Work Week

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+175

= Lot Traceability

Source Current (Body Diode)

= 25°C V = −3 V (Note 1)

Single Pulse Drain−to−Source Avalanche

Energy (I = 23.1 A, L = 1 mH) (Note 4)

267

270

°C

ORDERING INFORMATION

L(pk)

Device

Package

Shipping

Maximum Lead Temperature for Soldering

(1/25″ from case for 10 s)

NTHL022N120M3S

TO−247−3L

30 Units /

Tube

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. The maximium current rating is based on typical R

performance.

DS(on)

4. E of 267 mJ is based on starting T = 25°C; L = 1 mH, I = 23.1 A,

= 100 V, V = 18 V.

Publication Order Number:

May, 2023− Rev. 3

NTHL022N120M3S/D

12 3 4 5 6 7 8

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