Datasheet > NTE4151P

NTE4151P

更新时间： 2024-11-04 10:30:27

品牌	Logo	应用领域
安森美 - ONSEMI		栅
页数	文件大小	规格书
6页	67K
描述
Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89

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NTE4151P 数据手册

NTA4151P, NTE4151P

Small Signal MOSFET

−20 V, −760 mA, Single P−Channel,

Gate Zener, SC−75, SC−89

Features

http://onsemi.com

• Low R

for Higher Efficiency and Longer Battery Life

DS(on)

TYP

I MAX

• Small Outline Package (1.6 x 1.6 mm)

• SC−75 Standard Gullwing Package

• ESD Protected Gate

(BR)DSS

DS(on)

0.26 W @ −4.5 V

0.35 W @ −2.5 V

0.49 W @ −1.8 V

−20 V

−760 mA

• Pb−Free Packages are Available

Applications

• High Side Load Switch

• DC−DC Conversion

• Small Drive Circuits

P−Channel MOSFET

• Battery Operated Systems such as Cell Phones, PDAs, Digital

Cameras, etc.

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value Units

−20

6.0

DSS

Gate−to−Source Voltage

Continuous Drain Current

(Note 1)

Steady State

−760

MARKING DIAGRAM

& PIN ASSIGNMENT

Power Dissipation (Note 1)

SC−75

SC−89

301

313

Steady State

Pulsed Drain Current

tp =10 ms

1000

Drain

SC−75 / SOT−416

CASE 463

Operating Junction and Storage Temperature

T ,

−55 to

150

°C

STG

STYLE 5

xx M G

Continuous Source Current (Body Diode)

−250

260

Lead Temperature for Soldering Purposes

(1/8 in from case for 10 s)

°C

Gate−to−Source ESD Rating −

ESD

1800

Source

Gate

(Human Body Model, Method 3015)

SC−89

CASE 463C

THERMAL RESISTANCE RATINGS

Junction−to−Ambient − Steady State (Note 1)

°C/W

SC−75

SC−89

415

400

= Device Code

= Date Code*

= Pb−Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces).

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

September, 2006 − Rev. 5

NTA4151P/D

12 3 4 5 6

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与NTE4151P相关器件

型号	品牌	获取价格	描述	数据表
NTE4151PT1	ONSEMI	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,350MA I(D),SC-89
NTE4151PT1G	ONSEMI	获取价格	Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SCW
NTE4153NT1G	ONSEMI	获取价格	Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75
NTE416	ETC	获取价格	HARDWARE ACCESSORIES
NTE4164	NTE	获取价格	MICROPROCESSOR & MEMORY CIRCUITS
NTE417	ETC	获取价格	HARDWARE ACCESSORIES
NTE419	ETC	获取价格	HARDWARE ACCESSORIES
NTE42	NTE	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
NTE421	ETC	获取价格	HARDWARE ACCESSORIES
NTE422	ETC	获取价格	HARDWARE ACCESSORIES

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