NTE131 (PNP) & NTE155 (NPN)
Germanium Complementary Transistors
Audio Power Amplifier
Description:
The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese
TO66 type package designed for use in audio power amplifier applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +90°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +90°C
Note 1. NTE131MP is a matched pair of NTE131 with their DC Current Gain (hFE) matched to within
10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICEV
Test Conditions
VCE = 32V, VEB = 1V
VEB = 10V, IC = 0
Min Typ Max Unit
–
–
–
–
1
1
mA
mA
IEBO
hFE1
VCB = 0, IE = 100mA
VCB = 0, IE = 1A
35
36
10
–
–
170
185
–
hFE2
–
Common–Emitter Cutoff Frequency
Base–Emitter ON Voltage
fα
VCB = 2V, IE = 100mA
VCB = 0, IE = 1A
15
0.4
0.08
kHz
V
e
VBE
–
Collector–Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 100mA
–
–
V