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NTE155 PDF预览

NTE155

更新时间: 2024-10-31 23:54:47
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NTE155 数据手册

 浏览型号NTE155的Datasheet PDF文件第2页 
NTE131 (PNP) & NTE155 (NPN)  
Germanium Complementary Transistors  
Audio Power Amplifier  
Description:  
The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese  
TO66 type package designed for use in audio power amplifier applications.  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V  
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V  
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A  
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA  
Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6W  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +90°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +90°C  
Note 1. NTE131MP is a matched pair of NTE131 with their DC Current Gain (hFE) matched to within  
10% of each other.  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Symbol  
ICEV  
Test Conditions  
VCE = 32V, VEB = 1V  
VEB = 10V, IC = 0  
Min Typ Max Unit  
1
1
mA  
mA  
IEBO  
hFE1  
VCB = 0, IE = 100mA  
VCB = 0, IE = 1A  
35  
36  
10  
170  
185  
hFE2  
Common–Emitter Cutoff Frequency  
Base–Emitter ON Voltage  
fα  
VCB = 2V, IE = 100mA  
VCB = 0, IE = 1A  
15  
0.4  
0.08  
kHz  
V
e
VBE  
Collector–Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 100mA  
V

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