5秒后页面跳转
NT6DH128F64CG-S2 PDF预览

NT6DH128F64CG-S2

更新时间: 2024-09-20 02:25:03
品牌 Logo 应用领域
南亚科技 - NANYA 动态存储器双倍数据速率
页数 文件大小 规格书
81页 3459K
描述
Commercial Mobile DDR 1Gb SDRAM

NT6DH128F64CG-S2 数据手册

 浏览型号NT6DH128F64CG-S2的Datasheet PDF文件第2页浏览型号NT6DH128F64CG-S2的Datasheet PDF文件第3页浏览型号NT6DH128F64CG-S2的Datasheet PDF文件第4页浏览型号NT6DH128F64CG-S2的Datasheet PDF文件第5页浏览型号NT6DH128F64CG-S2的Datasheet PDF文件第6页浏览型号NT6DH128F64CG-S2的Datasheet PDF文件第7页 
Nanya Technology Corp.  
NT6DM64M16BD / NT6DM32M32BC  
Commercial Mobile DDR 1Gb SDRAM  
Features  
Data Integrity  
JEDEC LPDDR Compliant  
- Low Power Consumption  
- DRAM built-in Temperature Sensor for  
Temperature Compensated Self Refresh (TCSR)  
- 2n Prefetch Architecture  
- Auto Refresh and Self Refresh Modes  
Power Saving Mode  
- Differential clock inputs (CK and )  
- Double-data rate on DQs, DQS and DM  
- Commands entered on each positive CK edge  
- Deep Power Down Mode (DPD)  
- Partial Array Self Refresh (PASR)  
- Clock Stop capability during idle period  
LVCMOS Interface and Power Supply  
- VDD/VDDQ=1.70 to 1.95V  
- DQS edge-aligned with data for READs;  
center-aligned with data for WRITEs  
- Status Register Read (SRR)  
Signal Integrity  
- Configurable DS for system compatibility  
Options  
Speed Grade (CL-TRCD-TRP)1  
Temperature Range (Tc)  
- 333 Mbps / 3-3-3  
- 400 Mbps / 3-3-3  
- Commercial Grade = -25~85℃  
Programmable Functions  
Burst Type (Sequential, Interleaved)  
Driver Strength (full, 1/2, 3/4, 1/4)  
CAS Latency (2, 3)  
Burst Length (2, 4, 8, 16)  
Packages / Density Information  
Density and Addressing  
1Gb  
Lead-free RoHS compliance and Halogen-free  
Item  
1Gb  
Length x Width  
(mm)  
Ball pitch  
(mm)  
(Org. / Package)  
Addressing  
Organization  
Number of banks  
Bank Address  
Auto precharge  
Row Address  
Column Address  
tRFC(ns) 2  
Standard  
Reduced Page Size  
64M x 16 32M x 32  
32M x 32  
4
4
4
60-ball  
64Mx16  
8.00 x 9.00  
0.80  
0.80  
BA0,BA1 BA0,BA1  
BA0,BA1  
A10/AP  
A0-A13  
A0-A8  
72  
VFBGA  
A10/AP  
A0-A13  
A0-A9  
72  
A10/AP  
A0-A12  
A0-A9  
72  
90-ball  
32Mx32  
8.00 x 13.00  
VFBGA  
tREFI (µs) 3  
7.8  
7.8  
7.8  
NOTE 1 The timing specification of high speed bin is backward compatible with low speed bin.  
NOTE 2 Violating tRFC specification will induce malfunction.  
NOTE 3 tREFI values for all bank refresh is within temperature specification(<= 85).  
1
Version 1.6  
06 / 2014  
Nanya Technology Corporation ©  
All Rights Reserved  
NTC has the rights to change any specifications or product without notification.  

与NT6DH128F64CG-S2相关器件

型号 品牌 获取价格 描述 数据表
NT6DH128F64CK-S1 NANYA

获取价格

Commercial Mobile DDR 1Gb SDRAM
NT6DH128M16AC-S1 NANYA

获取价格

Commercial Mobile DDR 1Gb SDRAM
NT6DH128M16AD-S1 NANYA

获取价格

Commercial Mobile DDR 1Gb SDRAM
NT6DH128M16AD-S2 NANYA

获取价格

Commercial Mobile DDR 1Gb SDRAM
NT6DH128M16AG-S1 NANYA

获取价格

Commercial Mobile DDR 1Gb SDRAM
NT6DH128M16AG-S2 NANYA

获取价格

Commercial Mobile DDR 1Gb SDRAM
NT6DH128M16AK-S1 NANYA

获取价格

Commercial Mobile DDR 1Gb SDRAM
NT6DH128M16BC-S1 NANYA

获取价格

Commercial Mobile DDR 1Gb SDRAM
NT6DH128M16BD-S1 NANYA

获取价格

Commercial Mobile DDR 1Gb SDRAM
NT6DH128M16BG-S1 NANYA

获取价格

Commercial Mobile DDR 1Gb SDRAM