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NSV30100LT1G PDF预览

NSV30100LT1G

更新时间： 2024-10-02 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管
页数 文件大小 规格书
6页 66K
描述
Low VCE(sat) Transistor, PNP, 30 V, 1.0 A

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NSV30100LT1G 数据手册

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NSS30100LT1G  
30 V, 2 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
http://onsemi.com  
Typical application are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
30 VOLTS  
2.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 200 mW  
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
COLLECTOR  
3
• This is a Pb−Free Device  
1
BASE  
MAXIMUM RATINGS (T = 25°C)  
A
2
Rating  
Symbol  
Max  
−30  
Unit  
Vdc  
Vdc  
Vdc  
A
EMITTER  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
−50  
−5.0  
−1.0  
−2.0  
3
Collector Current − Continuous  
Collector Current − Peak  
I
C
I
A
CM  
1
2
THERMAL CHARACTERISTICS  
Characteristic  
SOT−23 (TO−236)  
CASE 318  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
(Note 1)  
310  
mW  
D
STYLE 6  
T = 25°C  
A
Derate above 25°C  
2.5  
mW/°C  
°C/W  
Thermal Resistance,  
Junction to Ambient  
R
(Note 1)  
403  
θ
JA  
DEVICE MARKING  
3
Total Device Dissipation  
P
(Note 2)  
(Note 2)  
710  
mW  
D
T = 25°C  
A
Derate above 25°C  
5.7  
mW/°C  
°C/W  
VS4  
Thermal Resistance,  
Junction to Ambient  
R
176  
2
1
θ
JA  
VS4 = Specific Device Code  
Total Device Dissipation  
(Single Pulse < 10 sec.)  
P
575  
mW  
Dsingle  
(Note 3)  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
ORDERING INFORMATION  
J
stg  
†
Device  
NSS30100LT1G  
Package  
Shipping  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. FR−4 @ Minimum Pad.  
2. FR−4 @ 1.0 X 1.0 inch Pad.  
SOT−23  
3000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
3. Refer to Figure 8.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
June, 2005 − Rev. 0  
NSS30100L/D  
 
123456

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