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NST3906F3T5 PDF预览

NST3906F3T5

更新时间: 2024-02-12 00:31:35
品牌 Logo 应用领域
威伦 - WILLAS /
页数 文件大小 规格书
5页 815K
描述
PNP General Purpose Transistor

NST3906F3T5 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:0.55
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.347 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
最大关闭时间(toff):300 ns最大开启时间(吨):70 ns
Base Number Matches:1

NST3906F3T5 数据手册

 浏览型号NST3906F3T5的Datasheet PDF文件第2页浏览型号NST3906F3T5的Datasheet PDF文件第3页浏览型号NST3906F3T5的Datasheet PDF文件第4页浏览型号NST3906F3T5的Datasheet PDF文件第5页 
PNP General Purpose Transistor  
MNST3906F3T5  
SOT-1123  
Package  
The MNST3906F3T5 device is  
designed for general purpose  
SOT1123  
applications and is housed in  
the SOT1123 surface  
amplifier  
mount package.  
3
This device is ideal for lowpower surface  
premium.  
applications where board space is at a  
mount  
2
1
CASE 524AA  
STYLE 1  
Features  
h , 100300  
FE  
COLLECTOR  
3
Low V  
, 0.4 V  
CE(sat)  
Reduces Board Space  
This is a PbFree Device  
1
BASE  
2
MAXIMUM RATINGS  
Rating  
EMITTER  
Symbol  
Value  
40  
Unit  
Vdc  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current Continuous  
V
CEO  
V
CBO  
V
EBO  
MARKING DIAGRAM  
40  
Vdc  
3 M  
5.0  
200  
Vdc  
I
C
mAdc  
3
M
= Device Code  
= Date Code  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
Total Device Dissipation, T = 25°C  
P
D
290  
2.3  
mW  
mW/°C  
A
Device  
M NST3906F3T5  
Package  
Shipping  
Derate above 25°C  
(Note 1)  
SOT1123 8000/Tape & Reel  
(PbFree)  
Thermal Resistance,  
JunctiontoAmbient  
432  
°C/W  
R
q
JA  
(Note 1)  
Total Device Dissipation, T = 25°C  
Derate above 25°C  
P
347  
2.8  
mW  
mW/°C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
A
D
(Note 2)  
Thermal Resistance,  
JunctiontoAmbient  
360  
°C/W  
°C/W  
°C  
R
q
JA  
(Note 2)  
Thermal Resistance,  
JunctiontoLead 3  
R
143  
JL  
q
(Note 2)  
Junction and Storage Temperature Range T , T  
55 to  
+150  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
1. 100 mm 1 oz, copper traces.  
2
2. 500 mm 1 oz, copper traces.M  
2014.09  
www.willas.com.tw  
Rev. A  
1
頁  

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