Datasheet > NSL12AW

NSL12AW

更新时间： 2024-11-28 03:45:55

品牌	Logo	应用领域
安森美 - ONSEMI		晶体电池晶体管
页数	文件大小	规格书
4页	49K
描述
High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications

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NSL12AW 数据手册

NSL12AW

High Current Surface Mount

PNP Silicon Low V_CE(sat)

Transistor for Battery

Operated Applications

Features:

http://onsemi.com

• High Current Capability (3 A)

• High Power Handling (Up to 650 mW)

12 VOLTS

3.0 AMPS

PNP TRANSISTOR

• Low V

(170 mV Typical @ 1 A)

CE(s)

• Small Size

Benefits:

• High Specific Current and Power Capability Reduces Required PCB Area

• Reduced Parasitic Losses Increases Battery Life

COLLECTOR

1, 2, 5, 6

MAXIMUM RATINGS (T = 25°C)

BASE

Rating

Symbol

Max

–12

–5.0

Unit

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

CEO

CBO

EBO

EMITTER

Collector Current – Continuous

Collector Current – Peak

–2.0

–3.0

Electrostatic Discharge

ESD

HBM Class 3

MM Class C

THERMAL CHARACTERISTICS

Characteristic

CASE 419B

SOT–363/SC–88

STYLE 20

Symbol

Max

Unit

Total Device Dissipation

T = 25°C

(Note 1)

450

Derate above 25°C

3.6

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

(Note 1)

275

DEVICE MARKING

Total Device Dissipation

(Note 2)

650

T = 25°C

Derate above 25°C

5.2

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

(Note 2)

192

Thermal Resistance,

Junction to Lead 6

105

1.4

°C/W

11 = Specific Device Code

= Date Code

Total Device Dissipation

(Single Pulse < 10 sec.)

P Single

ORDERING INFORMATION

Junction and Storage

Temperature Range

T , T

–55 to

+150

°C

stg

Device

NSL12AWT1

Package

Shipping

3000/Tape & Reel

1. FR–4, Minimum Pad, 1 oz Coverage

2. FR–4, 1″ Pad, 1 oz Coverage

SOT–416

Semiconductor Components Industries, LLC, 2002

Publication Order Number:

April, 2002 – Rev. 1

NSL12AW/D

12 3 4

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