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NSL12TT1 PDF预览

NSL12TT1

更新时间: 2024-11-06 23:54:31
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 71K
描述
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 500MA I(C) | SOT-416

NSL12TT1 数据手册

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NSL12TT1  
High Current Surface  
Mount PNP Silicon  
Low VCE(sat) Transistor for  
Battery Operated  
Applications  
http://onsemi.com  
12 VOLTS  
1.0 AMPS  
PNP TRANSISTOR  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
–12  
–20  
–4.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
COLLECTOR  
3
1
Collector Current – Peak  
Collector Current – Continuous  
I
C
–1.0  
–0.5  
BASE  
Electrostatic Discharge  
ESD  
HBM Class 3B  
MM Class C  
2
EMITTER  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
T = 25°C  
A
P
D
(Note 1)  
210  
mW  
3
Derate above 25°C  
1.7  
mW/°C  
°C/W  
2
1
Thermal Resistance,  
Junction to Ambient  
R
(Note 1)  
595  
θ
JA  
CASE 463  
SOT–416/SC–75  
STYLE 1  
Total Device Dissipation  
P
(Note 2)  
365  
mW  
D
T = 25°C  
A
Derate above 25°C  
2.9  
mW/°C  
°C/W  
Thermal Resistance,  
Junction to Ambient  
R
(Note 2)  
340  
θ
JA  
DEVICE MARKING  
Thermal Resistance,  
Junction to Lead #3  
R
205  
°C/W  
°C  
θ
JL  
Junction and Storage  
Temperature Range  
T , T  
J
–55 to  
+150  
stg  
L2  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 X 1.0 inch Pad  
L2 = Specific Device Code  
ORDERING INFORMATION  
Device  
NSL12TT1  
Package  
Shipping  
3000/Tape & Reel  
SOT–416  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
February, 2002 – Rev. 2  
NSL12TT1/D  

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