Datasheet > NSL12TT1

NSL12TT1

更新时间： 2024-11-27 23:54:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	71K
描述
TRANSISTOR \| BJT \| PNP \| 12V V(BR)CEO \| 500MA I(C) \| SOT-416

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中文翻译

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数据手册

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NSL12TT1 数据手册

NSL12TT1

High Current Surface

Mount PNP Silicon

Low V_CE(sat)Transistor for

Battery Operated

Applications

http://onsemi.com

12 VOLTS

1.0 AMPS

PNP TRANSISTOR

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Max

–12

–20

–4.0

Unit

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

CEO

CBO

EBO

COLLECTOR

Collector Current – Peak

Collector Current – Continuous

–1.0

–0.5

BASE

Electrostatic Discharge

ESD

HBM Class 3B

MM Class C

EMITTER

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

T = 25°C

(Note 1)

210

Derate above 25°C

1.7

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

(Note 1)

595

CASE 463

SOT–416/SC–75

STYLE 1

Total Device Dissipation

(Note 2)

365

T = 25°C

Derate above 25°C

2.9

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

(Note 2)

340

DEVICE MARKING

Thermal Resistance,

Junction to Lead #3

205

°C/W

°C

Junction and Storage

Temperature Range

T , T

–55 to

+150

stg

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 X 1.0 inch Pad

L2 = Specific Device Code

ORDERING INFORMATION

Device

NSL12TT1

Package

Shipping

3000/Tape & Reel

SOT–416

Semiconductor Components Industries, LLC, 2002

Publication Order Number:

February, 2002 – Rev. 2

NSL12TT1/D

12 3 4 5 6 7 8

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