是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TO-258 |
包装说明: | FLANGE MOUNT, R-MSFM-P3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.92 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (Abs) (ID): | 24 A |
最大漏极电流 (ID): | 24 A | 最大漏源导通电阻: | 0.23 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-258AA |
JESD-30 代码: | R-MSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 250 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NSF40504 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 19A I(D) | TO-258 | |
NSF40505 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
NSF40604 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Meta | |
NSF406045 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 15.5A I(D) | TO-258 | |
NSF40708 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 11.5A I(D), 700V, 0.8ohm, 1-Element, N-Channel, Silicon, Me | |
NSF40709 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 10.5A I(D), 700V, 0.9ohm, 1-Element, N-Channel, Silicon, Me | |
NSF40808 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Meta | |
NSF40911 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Meta | |
NSF40913 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal | |
NSF41011 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Met |