是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | D2PAK | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.24 | Is Samacsys: | N |
雪崩能效等级(Eas): | 100 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (Abs) (ID): | 80 A | 最大漏极电流 (ID): | 80 A |
最大漏源导通电阻: | 0.015 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 120 W |
最大脉冲漏极电流 (IDM): | 200 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NP80N055ELE-E2-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N055KHE | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N055KHE-AZ | NEC |
获取价格 |
暂无描述 | |
NP80N055KHE-E1-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N055KHE-E2-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N055KLE | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N055KLE-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Met | |
NP80N055KLE-E1-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N055KLE-E2-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N055KLE-E2-AY | RENESAS |
获取价格 |
80A, 55V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, LEAD FREE, MP-25ZK, TO-263, 3 |