Datasheet > NP60N04ILF-E2

NP60N04ILF-E2

更新时间： 2024-01-05 11:15:59

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	150K
描述
TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,60A I(D),TO-252

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中文翻译

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技术参数
数据手册

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NP60N04ILF-E2 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.76
配置：	Single	最大漏极电流 (Abs) (ID)：	60 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	100 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

NP60N04ILF-E2 数据手册

DATA SHEET

NP60N^M0^O4^SH^FIL^ELF^D,^EN^FFP^EC6^T0^TRN^A0^NS4^ISI^TL^OF^R

SWITCHING

N-CHANNEL POWER MOS FET

ORDERING INFORMATION

DESCRIPTION

PART NUMBER

NP60N04HLF

NP60N04ILF

PACKAGE

TO-251 (MP-3)

TO-252 (MP-3Z)

The NP60N04HLF and NP60N04ILF are N-channel

MOS Field Effect Transistors designed for high current

switching applications.

FEATURES

• Super low on-state resistance

(TO-251)

(TO-252)

R^DS(on)1= 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A)

R^DS(on)2= 9.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

• Low C^iss: Ciss = 2600 pF TYP. (VDS = 25 V, VGS = 0 V)

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C) ^Note1

Drain Current (pulse) ^Note2

VDSS

VGSS

ID(DC)

I^D(pulse)

PT1

240

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

100

°C

PT2

1.2

T^ch

175

Storage Temperature

T^stg

−55 to +175

Repetitive Avalanche Current ^Note3

Repetitive Avalanche Energy ^Note3

I^AR

E^AR

100

Notes 1. Calculated contact current according to MAX. allowable channel temperature.

2. PW ≤ 10 µs, Duty Cycle ≤ 1%

3. V^DD= 20 V, RG = 25 Ω, VGS = 20 → 0 V, Tch(peak) ≤ 150°C

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16793EJ1V0DS00 (1st edition)

Date Published December 2003 NS CP(K)

Printed in Japan

2003

12 3 4 5 6 7

中文翻译

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与NP60N04ILF-E2相关器件

型号	品牌	获取价格	描述	数据表
NP60N04KUG	RENESAS	获取价格	Product Scout Automotive
NP60N04KUG_15	RENESAS	获取价格	SWITCHING N-CHANNEL POWER MOS FET
NP60N04KUG-AZ	RENESAS	获取价格	60A, 40V, 0.0061ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN
NP60N04KUG-E1-AY	RENESAS	获取价格	Old Company Name in Catalogs and Other Documents
NP60N04KUG-E2	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,60A I(D),TO-263AB
NP60N04MUG	RENESAS	获取价格	Product Scout Automotive
NP60N04MUG-S18-AY	NEC	获取价格	Power Field-Effect Transistor, 60A I(D), 40V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
NP60N04MUK	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
NP60N04MUK-S18-AY	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
NP60N04NUK	RENESAS	获取价格	Product Scout Automotive

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