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NP60N04VLK PDF预览

NP60N04VLK

更新时间: 2024-09-26 01:23:51
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
8页 336K
描述
N-channel Power MOS FET

NP60N04VLK 数据手册

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Preliminary Data Sheet  
NP60N04VLK  
40 V – 60 A – N-channel Power MOS FET  
Application: Automotive  
R07DS1246EJ0100  
Rev.1.00  
Feb 12, 2015  
Description  
The NP60N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications.  
Features  
Super low on-state resistance  
DS(on) = 3.9 mΩ MAX. (VGS = 10 V, ID = 30 A)  
R
Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)  
Logic level drive type  
Designed for automotive application and AEC-Q101 qualified  
Ordering Information  
Part No.  
Lead Plating  
Pure Sn (Tin)  
Packing  
Taping (E1 type)  
Taping (E2 type)  
Package  
1
NP60N04VLK-E1-AY *  
NP60N04VLK-E2-AY *  
Tape 2500 p/reel  
TO-252 (MP-3ZP)  
1
Note: *1 Pb-free (This product does not contain Pb in the external electrode)  
Absolute Maximum Ratings (TA = 25°C)  
Item  
Symbol  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
Ratings  
Unit  
V
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
40  
20  
V
60  
240  
A
1
Drain Current (pulse) *  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
105  
W
W
°C  
°C  
A
PT2  
1.2  
Tch  
175  
Storage Temperature  
Repetitive Avalanche Current *  
Repetitive Avalanche Energy *  
Tstg  
–55 to +175  
28  
2
IAR  
2
EAR  
78  
mJ  
Notes: *1 TC = 25°C, PW 10 μs, Duty Cycle 1%  
*2 RG = 25 Ω, VGS = 20 V 0 V  
Thermal Resistance  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance  
Rth(ch-C)  
Rth(ch-A)  
1.43  
125  
°C/W  
°C/W  
R07DS1246EJ0100 Rev.1.00  
Feb 12, 2015  
Page 1 of 6  

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