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NP60N06VDK PDF预览

NP60N06VDK

更新时间: 2024-11-14 14:58:03
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
9页 434K
描述
60 V – 60 A – N-channel Power MOS FET

NP60N06VDK 数据手册

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Data Sheet  
NP60N06VDK  
60 V 60 A N-channel Power MOS FET  
R07DS1340EJ0200  
Rev.2.00  
May 24, 2018  
Application: Automotive  
Description  
NP60N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications.  
Features  
Super low on-state resistance  
RDS(on)1 = 7.9 mMAX. (VGS = 10 V, ID = 30 A)  
Low Ciss: Ciss = 2400 pF TYP. (VDS = 25 V)  
Designed for automotive application and AEC-Q101 qualified  
Outline  
TO-252(MP-3ZP)  
Equivalent circuit  
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and  
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity  
as much as possible, and quickly dissipate it once, when it has occurred.  
Ordering Information  
Part No.  
Lead Plating  
Packing  
Taping (E1 type)  
Taping (E2 type)  
Package  
NP60N06VDK-E1-AY *1  
NP60N06VDK-E2-AY *1  
Pure Sn (Tin)  
Tape 800 p/reel  
TO-252(MP-3ZP)  
Note: *1. Pb-free (This product does not contain Pb in the external electrode)  
R07DS1340EJ0200 Rev.2.00  
May 24, 2018  
Page 1 of 7  

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