Datasheet > NP60N06VLK-E2-AY

NP60N06VLK-E2-AY

更新时间： 2024-11-14 01:16:35

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
9页	552K
描述
60 V â 60 A â N-channel Power MOS FET

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技术参数
数据手册

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NP60N06VLK-E2-AY 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	MP-3ZP	针数：	3
Reach Compliance Code：	compliant	风险等级：	5.72
Base Number Matches：	1

NP60N06VLK-E2-AY 数据手册

Data Sheet

NP60N06VLK

60 V – 60 A – N-channel Power MOS FET

R07DS1339EJ0100

Rev.1.00

Apr 8, 2016

Application: Automotive

Description

NP60N06VLK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

•

Super low on-state resistance

⎯ R_DS(on)1= 7.9 mΩ MAX. (V_GS= 10 V, I_D= 30 A)

Low C_iss: C_iss= 2400 pF TYP. (V_DS= 25 V)

Designed for automotive application and AEC-Q101 qualified

•

Outline

Drain

Body

Diode

Gate

Protection

Diode

Source

TO-252(MP-3ZP)

Equivalent circuit

Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity

as much as possible, and quickly dissipate it once, when it has occurred.

Ordering Information

Part No.

Lead Plating

Packing

Taping (E1 type)

Taping (E2 type)

Package

NP60N06VLK-E1-AY ^*

NP60N06VLK-E2-AY ^*

Pure Sn (Tin)

Tape 800 p/reel

TO-252(MP-3ZP)

Note: *1. Pb-free (This product does not contain Pb in the external electrode)

R07DS1339EJ0100 Rev.1.00

Apr 8, 2016

Page 1 of 7

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