NP55N04SLG

更新时间： 2024-11-11 07:20:19

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	249K
描述
MOS FIELD EFFECT TRANSISTOR

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NP55N04SLG 数据手册

Preliminary Data Sheet

R07DS0242EJ0100

Rev.1.00

NP55N04SLG

MOS FIELD EFFECT TRANSISTOR

Description

Feb 23, 2011

The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

•

Channel temperature 175 degree rating

Super low on-state resistance

⎯ R_DS(on)1= 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A)

⎯ R_DS(on)2= 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A)

⎯ R_DS(on)3= 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A)

Low input capacitance

•

Gate to Source ESD protection diode built-in

Ordering Information

Part No.

NP55N04SLG-E1-AY ^∗

LEAD PLATING

PACKING

Package

Pure Sn (Tin)

Tape 2500 p/reel

TO-252 (MP-3ZK)

NP55N04SLG-E2-AY ^∗

Note: ^∗1. Pb-free (This product does not contain Pb in external electrode.)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC) (T_C= 25°C)

V_DSS

V_GSS

I_D(DC)

Drain Current (pulse) ^∗

I_D(pulse)

P_T1

220

Total Power Dissipation (T_C= 25°C)

Total Power Dissipation (T_A= 25°C)

Channel Temperature

°C

P_T2

1.2

175

T_ch

Storage Temperature

Repetitive Avalanche Current ^∗

Repetitive Avalanche Energy ^∗

T_stg

I_AR

−55 to +175

E_AR

Thermal Resistance

Channel to Case Thermal Resistance

Channel to Ambient Thermal Resistance ^∗2

R_th(ch-C)

R_th(ch-A)

1.95

125

°C/W

Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%

^∗2. Starting T_ch≤ 150°C, V_DD= 20 V, R_G= 25 Ω, V_GS= 20 → 0 V

R07DS0242EJ0100 Rev.1.00

Feb 23, 2011

Page 1 of 6

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与NP55N04SLG相关器件

型号	品牌	获取价格	描述	数据表
NP55N04SLG-E1-AY	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
NP55N04SLG-E2-AY	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR
NP55N04SUG	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
NP55N04SUG	RENESAS	获取价格	55A, 40V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, MP-3ZK, 3 PIN
NP55N04SUG-AY	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,55A I(D),TO-252
NP55N04SUG-E1	RENESAS	获取价格	NP55N04SUG-E1
NP55N04SUG-E1-AY	NEC	获取价格	Power Field-Effect Transistor, 55A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me
NP55N04SUG-E2	RENESAS	获取价格	NP55N04SUG-E2
NP55N055SDG	RENESAS	获取价格	55 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, MP-3ZK, 3 PIN
NP55N055SDG-AY	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,55A I(D),TO-252