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NP36N055HHE-AZ

更新时间: 2024-02-08 19:36:28
品牌 Logo 应用领域
日电电子 - NEC 开关脉冲晶体管
页数 文件大小 规格书
8页 66K
描述
Power Field-Effect Transistor, 36A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, MP-3, 3 PIN

NP36N055HHE-AZ 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

NP36N055HHE-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
NP36N055HHE, NP36N055IHE  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
These products are N-Channel MOS Field Effect Transistor  
designed for high current switching applications.  
PART NUMBER  
PACKAGE  
TO-251  
NP36N055HHE  
NP36N055IHE  
TO-252  
FEATURES  
Channel temperature 175 degree rated  
Super low on-state resistance  
RDS(on) = 14 mMAX. (VGS = 10 V, ID = 18 A)  
Low Ciss : Ciss = 2300 pF TYP.  
Built-in gate protection diode  
(TO-251)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to Source Voltage  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
55  
±20  
V
V
Gate to Source Voltage  
Drain Current (DC)  
±36  
A
Drain Current (Pulse) Note1  
Total Power Dissipation (TA = 25 °C)  
Total Power Dissipation (TC = 25 °C)  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
Channel Temperature  
±144  
1.2  
A
W
W
A
(TO-252)  
PT  
120  
IAS  
36 / 33  
12 / 108  
175  
EAS  
mJ  
°C  
Tch  
Storage Temperature  
Tstg  
–55 to + 175 °C  
Notes 1. PW 10 µ s, Duty cycle 1 %  
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V (see Figure 4.)  
THERMAL RESISTANCE  
Channel to Case  
Rth(ch-C)  
Rth(ch-A)  
1.25  
125  
°C/W  
°C/W  
Channel to Ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published March 2001 NS CP(K)  
Printed in Japan  
D14152EJ3V0DS00 (3rd edition)  
The mark shows major revised points.  
1999,2000  
©

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