Preliminary Data Sheet
NP35N04YUG
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0016EJ0100
Rev.1.00
Jul 01, 2010
The NP35N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
•
Low on-state resistance
⎯ RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 17.5 A)
Low Ciss: Ciss = 1900 pF TYP. (VDS = 25 V, VGS = 0 V)
Designed for automotive application and AEC-Q101 qualified
Small size package 8-pin HSON
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•
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Ordering Information
Part No.
NP35N04YUG -E1-AY ∗
NP35N04YUG -E2-AY ∗
LEAD PLATING
PACKING
Tape 2500 p/reel
Package
1
Pure Sn (Tin)
8-pin HSON, Taping (E1 type)
8-pin HSON, Taping (E2 type)
1
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
40
VGSS
ID(DC)
ID(pulse)
PT1
20
V
35
A
1
Drain Current (pulse) ∗
105
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) ∗
Channel Temperature
77
W
W
°C
°C
A
2
PT2
1.0
175
Tch
Storage Temperature
Repetitive Avalanche Current ∗
Repetitive Avalanche Energy ∗
Tstg
−55 to +175
22
3
IAR
3
EAR
48
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗
Rth(ch-C)
Rth(ch-A)
1.95
150
°C/W
°C/W
2
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
*3. Tch(peak) ≤ 150°C, RG = 25 Ω
R07DS0016EJ0100 Rev.1.00
Jul 01, 2010
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