Datasheet > NM93C14N

NM93C14N

更新时间： 2024-09-13 22:38:39

品牌	Logo	应用领域
美国国家半导体 - NSC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
8页	163K
描述
256-/1024-Bit Serial EEPROM

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数据手册

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NM93C14N 数据手册

September 1994

NM93C13/C14

256-/1024-Bit Serial EEPROM

General Description

Features

Typical active current 400 mA; Typical standby current

25 mA

The NM93C13/C14 is 256/1024, respectively, bits of

CMOS electrically erasable memory divided into 16/64 16-

bit registers. They are fabricated using National Semicon-

ductor’s floating-gate CMOS process for high speed, high

reliability and low power. The NM93C13/C14 is available in

an 8-pin SO package to save board space.

Reliable CMOS floating gate technology

4.5V to 5.5V operation in all modes

MICROWIRE compatible serial I/O

Self-timed programming cycle

The serial interface of the NM93C13/C14 is MICROWIRE^TM

compatible for simple interface to standard microcontrollers

and microprocessors. There are

Erase/Write Enable, Erase, Erase All, Write, Write All, and

Erase/Write Disable.

Device status indication during programming mode

15 years data retention

7 instructions: Read,

Endurance: 100,000 read/write cycles minimum

Packages available: 8-pin DIP, 8-pin SO

All programming cycles are completely self-timed for simpli-

fied operation. The ready/busy status is available on the DO

pin to indicate the completion of a programming cycle.

Block Diagram

TL/D/11291–1

TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.

MICROWIRE^TMis a trademark of National Semiconductor Corporation.

1995 National Semiconductor Corporation

TL/D/11291

RRD-B30M65/Printed in U. S. A.

12 3 4 5 6 7 8

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