生命周期: | Obsolete | 零件包装代码: | LCC |
包装说明: | CHIP CARRIER, R-CQCC-N15 | 针数: | 18 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.57 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 6.5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CQCC-N15 |
元件数量: | 1 | 端子数量: | 15 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
参考标准: | MIL-19500/564F | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | QUAD |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6849_09 | MICROSEMI | P-CHANNEL MOSFET |
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2N6849E | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |
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2N6849EA | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |
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2N6849EB | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |
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2N6849EBPBF | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |
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2N6849EC | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |
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