Datasheet > 2N6849HP

2N6849HP

更新时间： 2024-02-25 09:25:02

品牌	Logo	应用领域
SEME-LAB		/
页数	文件大小	规格书
3页	122K
描述
P-CHANNEL POWER MOSFET

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中文翻译

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技术参数
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2N6849HP 技术参数

生命周期：	Obsolete	零件包装代码：	LCC
包装说明：	CHIP CARRIER, R-CQCC-N15	针数：	18
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.57
Is Samacsys：	N	配置：	SINGLE
最小漏源击穿电压：	100 V	最大漏极电流 (ID)：	6.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-CQCC-N15
元件数量：	1	端子数量：	15
工作模式：	ENHANCEMENT MODE	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	CHIP CARRIER
极性/信道类型：	P-CHANNEL	认证状态：	Not Qualified
参考标准：	MIL-19500/564F	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	QUAD
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2N6849HP 数据手册

P-CHANNEL

POWER MOSFET

2N6849HP

•

MOSFET Transistor In A Hermetic Metal TO-205AD Package

Single Pulse Avalanche Energy Rated

Designed For Switching, Power Supply,

Motor Control and Amplifier Applications

•

Screening Options Available

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Drain – Source Voltage

-100V

= 20KΩ

Drain – Gate Voltage

-100V

Gate – Source Voltage

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

Total Power Dissipation at

20V

T = 25°C

T = 100°C

-6.5A

-4.1A

-25A

T = 25°C

25W

Derate Above 25°C

0.2W/°C

500mJ

Single Pulse Avalanche Energy ⁽²⁾⁽⁴⁾

Junction Temperature Range

Storage Temperature Range

-55 to +150°C

stg

THERMAL PROPERTIES

Symbols

Parameters

Max.

Units

°C/W

Thermal Resistance, Junction To Case

Thermal Resistance, Junction To Ambient

θJC

175

θJA

INTERNAL PACKAGE INDUCTANCE

Symbols

Parameters

Typ.

Units

L + L

Total Inductance

Notes

(1) Repetitive Rating: Pulse width limited by maximum junction temperature

(2) @V = -25V, Starting T = 25°C, L = 17.25mH, Peak I = -6.5A, V = -10V

(3) Pulse Width ≤ 300us, δ ≤ 2%

(4) By Design Only, Not A Production Test.

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 9395

Issue 1

Page 1 of 3

Website: http://www.semelab-tt.com

12 3

中文翻译

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与2N6849HP相关器件

型号	品牌	获取价格	描述	数据表
2N6849PBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met
2N6849SCC5206/003	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
2N6849SCC5206/003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
2N6849U	MICROSEMI	获取价格	P-CHANNEL MOSFET
2N684A	NJSEMI	获取价格	Thyristor SCR 150V 200A 3-Pin TO-48 Box
2N684A	CENTRAL	获取价格	SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS
2N684LEADFREE	CENTRAL	获取价格	Silicon Controlled Rectifier, 25A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-48, TO-
2N684MPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 25A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-208AA
2N684PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 25A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-208AA
2N684PBFREE	CENTRAL	获取价格	Silicon Controlled Rectifier,

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