Datasheet > NJ36D

NJ36D

更新时间： 2024-09-20 03:46:31

品牌	Logo	应用领域
INTERFET		晶体晶体管场效应晶体管
页数	文件大小	规格书
2页	128K
描述
Silicon Junction Field-Effect Transistor

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中文翻译

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数据手册

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NJ36D 数据手册

F-22

01/99

NJ36D Process

Silicon Junction Field-Effect Transistor

¥ Monolithic Dual Construction

¥ High Frequency Amplifier

¥ Low-Noise Amplifier

Absolute maximum ratings at TA = 25¡C

Gate Current, Ig

Operating Junction Temperature, Tj

Storage Temperature, Ts

10 mA

+150°C

– 65°C to +175°C

Devices in this Databook based on the NJ36D Process.

Datasheet

2N5911, 2N5912

IFN5911, IFN5912

Die Size = 0.026" X 0.026"

All Bond Pads = 0.004" Sq.

Substrate is also Gate.

At 25°C free air temperature:

NJ36D Process

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

Reverse Gate Leakage Current

Drain Saturation Current (Pulsed)

Gate Source Cutoff Voltage

– 25

– 35

0.05

I = – 1 mA, V = ØV

(BR)GSS

0.1

= – 15V, V = ØV

GSS

= 15V, V = ØV

DSS

– 0.5

– 8

= 15V, I = 1 nA

GS(OFF)

Dynamic Electrical Characteristics

Drain Source ON Resistance

Forward Transconductance

Input Capacitance

250

Ω

I = Ø mA, V = ØV

f = 1 kHz

ds(on)

8.5

5.5

1.5

= 15V, V = ØV

f = 1 kHz

f = 1 MHz

f = 1 kHz

7.0

= 10V, V = ØV

iss

Feedback Capacitance

= 10V, V = ØV

rss

Equivalent Noise Voltage

Differential Gate Source Voltage

e¯

nV/√HZ V = 15V, I = 5 mA

– V

100

= 15V, I = 5 mA

GS1

GS2

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

中文翻译

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NJ36D14195	WINCHESTER	获取价格	Card Edge Connector, 72 Contact(s), 2 Row(s), Female, Straight, Press Fit Terminal,