Datasheet > NJ3600L

NJ3600L

更新时间： 2024-09-19 03:45:03

品牌	Logo	应用领域
INTERFET		晶体放大器晶体管场效应晶体管
页数	文件大小	规格书
2页	127K
描述
Silicon Junction Field-Effect Transistor Large Capacitance Detector Pre-Amplifier

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数据手册

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NJ3600L 数据手册

F-48

01/99

NJ3600L Process

Silicon Junction Field-Effect Transistor

¥ Large Capacitance Detector Pre-Amplifier

S-D

Absolute maximum ratings at TA = 25¡C

Gate Current, Ig

10 mA

+150°C

– 65°C to +175°C

Operating Junction Temperature, Tj

Storage Temperature, Ts

Device in this Databook based on the NJ3600L Process.

Datasheet

IF3601

IF3602

D-S

Die Size = 0.074" X 0.074"

All Bond Pads ≥ 0.004" Sq.

Substrate is also Gate.

At 25°C free air temperature:

NJ3600L Process

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

I = 1 µA, V = ØV

Gate Source Breakdown Voltage

Reverse Gate Leakage Current

Drain Saturation Current (Pulsed)

Gate Source Cutoff Voltage

– 15

– 22

100

(BR)GSS

1000

– 3

= 10V, V = ØV

GSS

= 10V, V = ØV

DSS

– 0.5

= 10V, I = 1 nA

GS(OFF)

Dynamic Electrical Characteristics

Drain Source ON Resistance

Forward Transconductance (Pulsed)

Input Capacitance

Ω

I = 1 mA, V = ØV

f = 1 kHz

f = 30 Hz

ds(on)

750

650

= 10V, V = ØV

iss

Feedback Capacitance

= 10V, V = ØV

rss

Equivalent Noise Voltage

e¯

0.35

nV/√HZ V = 3V, I = 5 mA

DG D

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

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