是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | FLATPACK, S-CDFP-F14 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.92 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 50 | JESD-30 代码: | S-CDFP-F14 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 14 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | SQUARE | 封装形式: | FLATPACK |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NFQ2000 | ETC |
获取价格 |
TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 60V V(BR)DSS | 240MA I(D) | DIP | |
NFQ2001 | ETC |
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TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 30V V(BR)DSS | 600MA I(D) | DIP | |
NFQ2004 | ETC |
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TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 60V V(BR)DSS | 410MA I(D) | DIP | |
NFQ2006 | ETC |
获取价格 |
TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 90V V(BR)DSS | 410MA I(D) | DIP | |
NFQ2218A | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, | |
NFQ2219A | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, | |
NFQ2904A | MICROSEMI |
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Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, | |
NFQ2905A | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, | |
NFQ3250 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, | |
NFQ3251 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, |