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NFQ3468 PDF预览

NFQ3468

更新时间: 2024-01-07 10:56:52
品牌 Logo 应用领域
美高森美 - MICROSEMI 光电二极管晶体管
页数 文件大小 规格书
2页 36K
描述
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 4-Element, PNP, Silicon, FP-14

NFQ3468 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:FLATPACK, R-PDFP-F14
针数:14Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.92最大集电极电流 (IC):1 A
集电极-发射极最大电压:50 VJESD-30 代码:R-PDFP-F14
JESD-609代码:e0元件数量:4
端子数量:14最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLATPACK峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):125 MHz最大关闭时间(toff):90 ns
最大开启时间(吨):40 nsBase Number Matches:1

NFQ3468 数据手册

 浏览型号NFQ3468的Datasheet PDF文件第2页 
T
ECHNICAL
D
ATA  
1.0 AMPERE  
NFQ3467  
NFQ3468  
40 - 50 VOLTS  
0.5 WATTS  
QUAD MEMORY DRIVER  
PNP TRANSISTOR  
·
·
LOW SATURATION VOLTAGE  
HIGH FREQUENCY  
14 PIN  
FLATPACK  
MAXIMUM RATINGS*  
RATINGS  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current -- Continuous  
Total Power Dissipation @ TC = 250C  
Operating & Storage Junction Temperature Range  
SYMBOL  
VCEO  
VCBO  
VEBO  
IC  
NFQ3467  
NFQ3468  
UNITS  
Vdc  
Vdc  
Vdc  
Adc  
W
40  
40  
50  
50  
5.0  
1.0  
0.5  
PD  
TJ, Tstg  
-65 to +200  
0C  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
6/98 REV:  
Page 1 of 2  

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