5秒后页面跳转
NESG250134-T1-AZ-FB PDF预览

NESG250134-T1-AZ-FB

更新时间: 2024-02-25 17:00:38
品牌 Logo 应用领域
日电电子 - NEC 放大器晶体管
页数 文件大小 规格书
12页 654K
描述
RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN, LEAD FREE, 34, POWER MINIMOLD PACKAGE-3

NESG250134-T1-AZ-FB 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.09
外壳连接:EMITTER最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:4.5 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PSSO-F3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON GERMANIUM
标称过渡频率 (fT):10000 MHzBase Number Matches:1

NESG250134-T1-AZ-FB 数据手册

 浏览型号NESG250134-T1-AZ-FB的Datasheet PDF文件第6页浏览型号NESG250134-T1-AZ-FB的Datasheet PDF文件第7页浏览型号NESG250134-T1-AZ-FB的Datasheet PDF文件第8页浏览型号NESG250134-T1-AZ-FB的Datasheet PDF文件第9页浏览型号NESG250134-T1-AZ-FB的Datasheet PDF文件第11页浏览型号NESG250134-T1-AZ-FB的Datasheet PDF文件第12页 
NESG250134  
DISTORTION EVALUATION BOARD (f = 460 MHz)  
GND Vb  
VC GND  
C10  
R1 C12 C11  
C9  
C8  
C1  
SN  
RF IN  
RF OUT  
C4  
C5  
C6 C7 L2  
C2  
C3  
L1  
Notes  
1. 38 × 90 mm, t = 0.8 mm, double sided copper clad glass epoxy  
PWB.  
2. Back side: GND pattern  
3. Solder gold plated on pattern  
4.  
: Through holes  
DISTORTION EVALUATION CIRCUIT (f = 460 MHz)  
VCE  
R1  
VBE  
C12  
C11  
C10  
L2  
C9  
L1  
RF OUT  
C1  
RF IN  
C6  
C7  
C8  
C2  
C3  
C4  
C5  
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.  

与NESG250134-T1-AZ-FB相关器件

型号 品牌 描述 获取价格 数据表
NESG250134-T1FB NEC UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3

获取价格

NESG250134-T1FB-A NEC RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silic

获取价格

NESG250134-T1-FB-AZ RENESAS UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3

获取价格

NESG260234 NEC 3-PIN POWER MINIMOLD

获取价格

NESG260234 CEL NPN SILICON GERMANIUM RF TRANSISTOR

获取价格

NESG260234-A RENESAS RF & Microwave device

获取价格