Datasheet > NESG2046M33FB

NESG2046M33FB

更新时间： 2024-02-24 12:44:51

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
5页	32K
描述
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN, M33, 0804, SUPER LEADLESS MINIMOLD PACKAGE-3

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NESG2046M33FB 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	M33, 0804, SUPER LEADLESS MINIMOLD PACKAGE-3	Reach Compliance Code：	compliant
风险等级：	5.92	最大集电极电流 (IC)：	0.04 A
基于收集器的最大容量：	0.4 pF	集电极-发射极最大电压：	5 V
配置：	SINGLE	最高频带：	L BAND
JESD-30 代码：	R-PDSO-F3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON GERMANIUM	标称过渡频率 (fT)：	18000 MHz

NESG2046M33FB 数据手册

PRELIMINARY DATA SHEET

NPN SILICON GERMANIUM RF TRANSISTOR

NESG2046M33

NPN SiGe RF TRANSISTOR FOR

LOW NOISE, HIGH-GAIN AMPLIFICATION

3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PACKAGE)

FEATURES

•

The device is an ideal choice for low noise, high-gain amplification

NF = 0.8 dB TYP., G^a= 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

High breakdown voltage technology for SiGe Tr. adopted: V^CEO(absolute maximum ratings) = 5.0 V

3-pin super lead-less minimold (M33, 0804 package)

•

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

NESG2046M33

50 pcs (Non reel)

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 2 (Base) face the perforation side of the tape

NESG2046M33-T3

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

1.5

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

130

150

Tstg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10464EJ01V0DS (1st edition)

Date Published January 2004 CP(K)

Printed in Japan



NEC Compound Semiconductor Devices 2004

12 3 4 5

中文翻译

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与NESG2046M33FB相关器件

型号	品牌	获取价格	描述	数据表
NESG2046M33FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN,
NESG2046M33FB-T3	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN,
NESG2046M33FB-T3-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN,
NESG2046M33-T3	RENESAS	获取价格	RF POWER AMP TRANSISTOR, FT > 300 MHZ,5V V(BR)CEO,40MA I(C),SOT-416VAR
NESG2046M33-T3-A	CEL	获取价格	NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
NESG2046M33-T3-A	NEC	获取价格	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
NESG2101M05	NEC	获取价格	NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
NESG2101M05	CEL	获取价格	NPN SiGe HIGH FREQUENCY TRANSISTOR
NESG2101M05	RENESAS	获取价格	NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW
NESG2101M05-A	RENESAS	获取价格	NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

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