Datasheet > 晶体管 > 射频小信号双极晶体管> NESG2101M05-FB

NESG2101M05-FB

更新时间： 2024-02-23 11:56:47

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
14页	172K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, THIN, SUPER MINIMOLD, M05, 4 PIN

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技术参数
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NESG2101M05-FB 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F4
针数：	4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.13
其他特性：	LOW NOISE	最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	0.5 pF	集电极-发射极最大电压：	5 V
配置：	SINGLE	最高频带：	L BAND
JESD-30 代码：	R-PDSO-F4	JESD-609代码：	e6
元件数量：	1	端子数量：	4
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON GERMANIUM
标称过渡频率 (fT)：	17000 MHz	Base Number Matches：	1

NESG2101M05-FB 数据手册

NEC's NPN SiGe

HIGH FREQUENCY TRANSISTOR

NESG2101M05

FEATURES

•

HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY

VCEO = 5 V (Absolute Maximum)

HIGH OUTPUT POWER:

P1dB = 21 dBm at 2 GHz

LOW NOISE FIGURE:

NF = 0.9 dBm at 2 GHz

HIGH MAXIMUM STABLE POWER GAIN:

MSG= 17 dB at 2 GHz

LOW PROFILE M05 PACKAGE:

SOT-343 footprint, with a height of only 0.59 mm

Flat lead style for better RF performance

M05

DESCRIPTION

NEC's NESG2101M05 is fabricated using NEC s high voltage

Silicon Germanium process (UHS2-HV), and is designed for

a wide range of applications including low noise ampliﬁers,

medium power ampliﬁers, and oscillators

NEC slow proﬁle, ﬂat lead style M05 Package provides high

frequency performance for compact wireless designs.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NESG2101M05

M05

SYMBOLS

PARAMETERS AND CONDITIONS

Output Power at 1 dB Compression Point

UNITS

MIN

TYP

MAX

P1dB

dBm

VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz

Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz

Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz,

ZS = ZSOPT, ZL = ZLOPT

0.9

1.2

Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz,

ZS = ZSOPT, ZL = ZLOPT

11.0

13.0

0.6

Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz,

ZS = ZSOPT, ZL = ZLOPT

Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz,

ZS = ZSOPT, ZL = ZLOPT

19.0

MSG

|S21E|²

Maximum Stable Gain¹at VCE = 3 V, IC = 50 mA, f = 2 GHz

Insertion Power Gain at VCE = 3 V, IC = 50 mA, f = 2 GHz

Gain Bandwidth Product at VCE = 3 V, IC = 50 mA, f = 2 GHz

Reverse Transfer Capacitance²at VCB = 2 V, IC = 0 mA, f = 1 MHz

Collector Cutoff Current at VCB = 5V, IE = 0

14.5

11.5

17.0

13.5

GHz

Cre

0.4

0.5

100

260

ICBO

IEBO

hFE

Emitter Cutoff Current at VEB = 1 V, IC = 0

DC Current Gain³at VCE = 2 V, IC = 15 mA

130

190

Notes:

S21

S12

1. MSG =

2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to

the guard pin.

3. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

California Eastern Laboratories

12 3 4 5 6 7...14

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与NESG2101M05-FB相关器件

型号	品牌	描述	获取价格	数据表
NESG2101M05-FB-A	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN,	获取价格
NESG2101M05-T1	NEC	NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR	获取价格
NESG2101M05-T1	RENESAS	NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW	获取价格
NESG2101M05-T1-A	CEL	NPN SiGe HIGH FREQUENCY TRANSISTOR	获取价格
NESG2101M05-T1-A	RENESAS	NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW	获取价格
NESG2101M05-T1-A-FB	RENESAS	RF SMALL SIGNAL TRANSISTOR	获取价格

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