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NESG2101M16 PDF预览

NESG2101M16

更新时间： 2024-02-21 11:55:28
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
2页 85K
描述
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

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中文翻译

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NESG2101M16 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.13最大集电极电流 (IC)：0.1 A
基于收集器的最大容量：0.5 pF集电极-发射极最大电压：5 V
配置：SINGLE最高频带：L BAND
JESD-30 代码：R-PDSO-F6JESD-609代码：e6
元件数量：1端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：TIN BISMUTH
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON GERMANIUM标称过渡频率 (fT)：17000 MHz
Base Number Matches：1

NESG2101M16 数据手册

 浏览型号NESG2101M16的Datasheet PDF文件第2页 
PRELIMINARY DATA SHEET  
NEC's NPN SiGe  
HIGH FREQUENCY TRANSISTOR  
NESG2101M16  
FEATURES  
•
•
•
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY  
VCEO = 5 V (Absolute Maximum)  
HIGH OUTPUT POWER:  
P1dB = 21 dBm at 2 GHz  
LOW NOISE FIGURE:  
NF = 0.9 dB at 2 GHz  
NF = 0.6 dB at 1 GHz  
•
HIGH MAXIMUM STABLE POWER GAIN:  
MSG= 17 dB at 2 GHz  
M16  
•
LOW PROFILE M16 PACKAGE:  
6-pin lead-less minimold  
DESCRIPTION  
NEC's NESG2101M16 is fabricated using NEC s high voltage  
Silicon Germanium process (UHS2-HV), and is designed for  
a wide range of applications including low noise amplifiers,  
medium power amplifiers, and oscillators  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
NESG2101M16  
M16  
SYMBOLS  
PARAMETERS AND CONDITIONS  
Output Power at 1 dB Compression Point  
UNITS  
MIN  
TYP  
MAX  
P1dB  
dBm  
21  
VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT  
GL  
Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz,  
dB  
dB  
15  
NF  
Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz,  
ZS = ZSOPT, ZL = ZLOPT  
0.9  
1.2  
Ga  
NF  
Ga  
Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz,  
ZS = ZSOPT, ZL = ZLOPT  
dB  
dB  
dB  
11.0  
13.0  
0.6  
Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz,  
ZS = ZSOPT, ZL = ZLOPT  
Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz,  
ZS = ZSOPT, ZL = ZLOPT  
19.0  
MSG  
|S21E|2  
fT  
Maximum Stable Gain1 at VCE = 3 V, IC = 50 mA, f = 2 GHz  
Insertion Power Gain at VCE = 3 V, IC = 50 mA, f = 2 GHz  
Gain Bandwidth Product at VCE = 3 V, IC = 50 mA, f = 2 GHz  
Reverse Transfer Capacitance2 at VCB = 2 V, IE = 0 mA, f = 1 MHz  
Collector Cutoff Current at VCB = 5V, IE = 0  
dB  
dB  
14.5  
11.5  
14  
17.0  
13.5  
17  
GHz  
pF  
Cre  
0.4  
0.5  
100  
100  
260  
ICBO  
IEBO  
hFE  
nA  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
DC Current Gain3 at VCE = 2 V, IC = 15 mA  
nA  
130  
190  
Notes:  
S21  
S12  
1. MSG =  
2. Collector to base capacitance when the emitter pin is grounded.  
3. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.  
California Eastern Laboratories  
12

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与NESG2101M16相关器件

型号 品牌 获取价格 描述 数据表
NESG2101M16_1 NEC

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 		NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINI
NESG2101M16-A NEC

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 		NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINI
NESG2101M16-A RENESAS

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 		L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6
NESG2101M16-A-FB NEC

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 		RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN,
NESG2101M16-A-FB RENESAS

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 		L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6
NESG2101M16-A-YFB RENESAS

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 		L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6
NESG2101M16-A-YFB NEC

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 		RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN,
NESG2101M16-FB-A NEC

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 		RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN,
NESG2101M16-T3 NEC

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 		NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
NESG2101M16-T3-A RENESAS

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 		L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6

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