是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PDFM-F2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.23 |
配置: | SINGLE | 最小漏源击穿电压: | 65 V |
最大漏极电流 (Abs) (ID): | 10 A | 最大漏极电流 (ID): | 0.01 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDFM-F2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 250 W |
最小功率增益 (Gp): | 18.5 dB | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NEM090853P-28-A | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
NEM091203P-28-A | NEC |
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
NEM091203P-28-A | RENESAS |
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NEM091203P-28-A | |
NEM091603P-28-A | RENESAS |
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NEM091603P-28-A | |
NEM091603P-28-A | NEC |
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
NEM091803S-28 | NEC |
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RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel | |
NEM091803S-28-A | NEC |
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RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel | |
NEM092081B28 | ETC |
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TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | SOT-171VAR | |
NEM094081B28 | ETC |
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TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | SOT-171VAR | |
NEM096081B28 | ETC |
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TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 9A I(C) | SOT-171VAR |