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NEM0995F01-30 PDF预览

NEM0995F01-30

更新时间： 2024-11-09 19:53:23
品牌 Logo 应用领域
日电电子 - NEC 局域网晶体管
页数 文件大小 规格书
3页 53K
描述
RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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中文翻译

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NEM0995F01-30 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84其他特性：HIGH RELIABILITY
外壳连接：SOURCE配置：COMMON SOURCE, 2 ELEMENTS
最小漏源击穿电压：60 V最大漏极电流 (ID)：15 A
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：VERY HIGH FREQUENCY BAND
JESD-30 代码：R-CDFM-F4元件数量：2
端子数量：4工作模式：ENHANCEMENT MODE
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管元件材料：SILICONBase Number Matches：1

NEM0995F01-30 数据手册

 浏览型号NEM0995F01-30的Datasheet PDF文件第2页浏览型号NEM0995F01-30的Datasheet PDF文件第3页 
High Power N-Channel Silicon  
MOSFET For Cellular Base Stations  
NEM0995F01-30  
FEATURES  
3rd Order INTERMODULATION DISTORTION  
AND DRAIN CURRENT vs. OUTPUT POWER  
• HIGH OUTPUT POWER: 95 W  
• HIGH LINEAR GAIN: 12 dB  
-20  
8
6
4
2
0
V
DS = 30 V  
= 900 MHz  
= 900.1 MHz  
f
f
1
2
• HIGH DYNAMIC RANGE  
-30  
-40  
-50  
-60  
• LOW INTERMODULATION DISTORTION  
I
DQ = 0.4 A  
• INTERNALLY MATCHED FOR THE 820-960 MHz  
BAND (INPUT ONLY)  
I
DS  
IM  
3
• PUSH-PULL STRUCTURE  
I
DQ = 1.0 A  
I
DQ = 0.4 A  
DESCRIPTION  
25  
30  
35  
40  
45  
50  
The NEM0995F01-30 is a high power enhancement mode  
Silicon MOSFET. Its design employs a vertical geometry for  
high drain to source breakdown voltage, a 1.3 µm x 28.8 mm  
gate, a gold metallization system, and plasma silicon nitride  
layer on the surface of the transistor for long life and reliable  
operation. The NEM0995F01-30 uses two chips in a push-  
pull configuration and internal input pre-matching circuitry to  
provide broadband impedance transformation in the 820-960  
MHz band, making it ideal for Cellular Base Station Applica-  
tions.  
Average Output Power, POUT (dBm)  
The NEM0995F01-30 transistors are manufactured to NEC's  
stringent quality assurance standards to ensure highest reli-  
ability and consistent superior performance.  
ELECTRICAL CHARACTERISTICS (TC = 25°C)  
PART NUMBER  
NEM0995F01-30  
PACKAGE OUTLINE  
F01  
SYMBOLS  
CHARACTERISTICS  
Output Power  
UNITS  
MIN  
TYP  
MAX  
TEST CONDITIONS  
POUT  
W
80  
95  
960 MHz; PIN = 40 dBm  
ηD  
Drain Efficiency  
Linear Gain  
%
35  
11  
43  
IDQ = 200 mA x 2  
GL  
dB  
12.4  
VDD = 30 V; PIN = 30 dBm  
IDSS  
VGS (OFF)  
IGSS  
Drain-Source Leakage Current  
Gate to Source Cutoff Voltage  
Gate-Source Leakage Current  
Thermal Resistance  
mA  
V
2.0  
4
VDS = 60 V; VGS = 0 V  
VDS = 5 V; IDS = 50 mA  
VGS = 7 V; VDS = 0 V  
Channel to Case  
1
µA  
1
RTH  
°C/W  
0.6  
California Eastern Laboratories  
123

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