Datasheet > NEM090853P-28-A

NEM090853P-28-A

更新时间： 2024-11-09 19:43:23

品牌	Logo	应用领域
日电电子 - NEC		局域网放大器 ISM频段光电二极管晶体管
页数	文件大小	规格书
8页	80K
描述
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC, T-97M (3P), 2 PIN

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技术参数
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NEM090853P-28-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	FLANGE MOUNT, R-PDFM-F2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.23	配置：	SINGLE
最小漏源击穿电压：	65 V	最大漏极电流 (ID)：	0.01 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDFM-F2	JESD-609代码：	e6
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最小功率增益 (Gp)：	18.5 dB	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

NEM090853P-28-A 数据手册

DATA SHEET

LDMOS FIELD EFFECT TRANSISTOR

NEM090853P-28

N-CHANNEL SILICON POWER LDMOS FET

FOR UHF-BAND POWER AMPLIFIER

DESCRIPTION

The NEM090853P-28 is an N-channel enhancement-mode lateral MOS FET designed for 0.8 to 1.0 GHz, 90 W

single-end power amplifier applications, such as, GSM/EDGE/N-CDMA cellular base station. Dies are manufactured

using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and triple layer

aluminum silicon metalization offer a high degree of reliability.

FEATURES

•

High 1 dB compression output power : PO (1 dB) = 90 W TYP. (VDS = 28 V, IDset = 800 mA, f = 920 to 960 MHz CW)

High linear gain

: G^L= 19.5 dB TYP. (VDS = 28 V, IDset = 800 mA, f = 920 to 960 MHz CW)

: ηd = 57% TYP. (VDS = 28 V, IDset = 800 mA, f = 920 to 960 MHz CW)

: IM³= −37 dBc TYP. (VDS = 28 V, IDset = 800 mA, f = 960/960.1 MHz,

P^out= 43 dBm (2 tones) )

High drain efficiency

Low intermodulation distortion

: IM³= −45 dBc TYP. (VDS = 28 V, IDset = 800 mA, f = 880/880.1 MHz,

P^out= 40 dBm (2 tones) )

•

Internal matched (Input and Output) for ease of use

Low cost hollow plastic packages

100% screening

Integrated ESD protection

Effective prevention against humidity

Excellent stability against HCI (Hot Carrier Injection)

APPLICATION

•

Digital cellular base station PA : GSM/EDGE/N-CDMA etc.

ORDERING INFORMATION

Part Number

Package

T-97M (3P)

Supplying Form

NEM090853P-28

ESD protective envelope

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 1 pcs.

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10392EJ01V0DS (1st edition)

Date Published April 2004 CP(K)

Printed in Japan



NEC Compound Semiconductor Devices 2003, 2004

12 3 4 5 6 7 8

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与NEM090853P-28-A相关器件

型号	品牌	获取价格	描述	数据表
NEM091203P-28-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
NEM091203P-28-A	RENESAS	获取价格	NEM091203P-28-A
NEM091603P-28-A	RENESAS	获取价格	NEM091603P-28-A
NEM091603P-28-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
NEM091803S-28	NEC	获取价格	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel
NEM091803S-28-A	NEC	获取价格	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel
NEM092081B28	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 3A I(C) \| SOT-171VAR
NEM094081B28	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 6A I(C) \| SOT-171VAR
NEM096081B28	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 9A I(C) \| SOT-171VAR
NEM0995F01-30	NEC	获取价格	RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel,

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