2SJ648

更新时间： 2024-01-14 06:47:00

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
6页	136K
描述
MOS FIELD EFFECT TRANSISTOR

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技术参数
数据手册

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2SJ648 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	配置：	Single
最大漏极电流 (Abs) (ID)：	0.4 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	0.2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SJ648 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ648

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SJ648 is a switching device which can be driven directly by a

2.5 V power source.

+0.1

0.3

–0

0.15

–0.05

The 2SJ648 features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such as

power switch of portable machine and so on.

0 to 0.1

FEATURES

• 2.5 V drive available

+0.1

–0

• Low on-state resistance

0.2

0.5

R^DS(on)1= 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A)

R^DS(on)2= 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A)

R^DS(on)3= 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)

0.6

0.5

0.75 0.05

1.0

1.6 0.1

1: Source

2: Gate

3: Drain

ORDERING INFORMATION

PART NUMBER

2SJ648

PACKAGE

SC-75 (USM)

Marking: H1

EQUIVALENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T

−20

m12

m0.4

m1.6

200

Body

Diode

Gate

Drain Current (pulse) ^Note1

Total Power Dissipation ^Note2

Channel Temperature

Gate

Protection

Diode

°C

Source

T^ch

150

Storage Temperature

T^stg

−55 to +150

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 300 mm²x 0.64 mm.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge.

V^ESD= ±100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16597EJ2V0DS00 (2nd edition)

The mark

shows major revised points.

Date Published November 2004 NS CP(K)

Printed in Japan

2003

12 3 4 5 6

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