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NDT014LJ23ZD84Z PDF预览

NDT014LJ23ZD84Z

更新时间: 2024-02-16 12:28:16
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 229K
描述
Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

NDT014LJ23ZD84Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):2.8 A最大漏源导通电阻:0.16 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):10 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NDT014LJ23ZD84Z 数据手册

 浏览型号NDT014LJ23ZD84Z的Datasheet PDF文件第1页浏览型号NDT014LJ23ZD84Z的Datasheet PDF文件第3页浏览型号NDT014LJ23ZD84Z的Datasheet PDF文件第4页浏览型号NDT014LJ23ZD84Z的Datasheet PDF文件第5页浏览型号NDT014LJ23ZD84Z的Datasheet PDF文件第6页浏览型号NDT014LJ23ZD84Z的Datasheet PDF文件第7页 
Electrical Characteristics (TA = 25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
BVDSS  
IDSS  
Drain-Source Breakdown Voltage  
VGS = 0 V, ID = 250 µA  
VDS = 60 V, VGS = 0 V  
60  
V
Zero Gate Voltage Drain Current  
25  
µA  
µA  
nA  
nA  
250  
100  
-100  
TJ = 55°C  
IGSSF  
IGSSR  
Gate - Body Leakage, Forward  
Gate - Body Leakage, Reverse  
VGS = 20 V, VDS = 0 V  
VGS = -20 V, VDS= 0 V  
ON CHARACTERISTICS (Note 2)  
VGS(th)  
Gate Threshold Voltage  
VDS = VGS, ID = 250 µA  
VGS= 4.5 V, ID = 2.8 A  
1
1.5  
1.1  
3
V
0.8  
2
TJ = 125°C  
TJ = 125°C  
Static Drain-Source On-Resistance  
0.17  
0.22  
0.12  
0.2  
0.36  
0.16  
RDS(ON)  
W
VGS = 10 V, ID = 3.4 A  
VGS = 4.5 V , VDS = 5 V  
VGS = 10 V, VDS = 5 V  
VGS = 5 V, ID = 2.8 A  
ID(on)  
On-State Drain Current  
5
A
S
10  
GFS  
Forward Transconductance  
4.2  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
214  
70  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
VDS = 30 V, VGS = 0 V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
27  
SWITCHING CHARACTERISTICS (Note 2)  
Turn - On Delay Time  
Turn - On Rise Time  
Turn - Off Delay Time  
Turn - Off Fall Time  
Total Gate Charge  
6
12  
25  
28  
18  
5
ns  
ns  
tD(on)  
tr  
tD(off)  
tf  
VDD = 30 V, ID = 3 A,  
VGEN = 10 V, RGEN = 12 W  
14  
15  
10  
3.6  
0.8  
1.4  
ns  
ns  
nC  
nC  
nC  
Qg  
Qgs  
Qgd  
VDS = 10 V,  
ID = 2.8 A, VGS = 4.5 V  
Gate-Source Charge  
Gate-Drain Charge  
NDT014L Rev.D  

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