Datasheet > NDS0605-F169

NDS0605-F169

更新时间： 2024-11-10 11:15:15

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管场效应晶体管
页数	文件大小	规格书
6页	347K
描述
P 沟道增强型场效应晶体管，-60V，-0.18A，5Ω

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NDS0605-F169 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G3	Reach Compliance Code：	compliant
风险等级：	5.7	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	0.18 A
最大漏源导通电阻：	5 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	0.36 W	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

NDS0605-F169 数据手册

ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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与NDS0605-F169相关器件

型号	品牌	获取价格	描述	数据表
NDS0605L99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
NDS0605-MR	ETC	获取价格	MOSFET NDS0605 MINIREEL 500PCS
NDS0605S62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
NDS0610	FAIRCHILD	获取价格	P-Channel Enhancement Mode Field Effect Transistor
NDS0610	TYSEMI	获取价格	SOT-23 TO-92
NDS0610	TI	获取价格	120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
NDS0610	ONSEMI	获取价格	P 沟道增强型场效应晶体管，-60V，-0.12A，10Ω
NDS0610/D87Z	TI	获取价格	120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
NDS0610/L99Z	TI	获取价格	120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
NDS0610/S62Z	TI	获取价格	120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

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