NDS0610_NL

更新时间： 2024-11-25 13:11:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体小信号场效应晶体管开关光电二极管 PC
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NDS0610_NL 数据手册

April 1995

NDF0610 / NDS0610

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

-0.18 and -0.12A, -60V. R_DS(ON)= 10W

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process has been designed to minimize on-state resistance,

provide rugged and reliable performance and fast switching.

They can be used, with a minimum of effort, in most

applications requiring up to 180mA DC and can deliver

pulsed currents up to 1A. This product is particularly suited

to low voltage applications requiring a low current high side

switch.

Voltage controlled p-channel small signal switch

High density cell design for low R_DS(ON)

TO-92 and SOT-23 packages for both through hole and

surface mount applications

High saturation current

____________________________________________________________________________________________

SOT-23

NDS0610

TO-92

NDF0610

Absolute Maximum Ratings

T_A= 25°C unless otherwise noted

Symbol

Parameter

NDF0610

NDS0610

Units

V_DSS

Drain-Source Voltage

-60

V_DGR

Drain-Gate Voltage (R_GS< 1 MW)

Gate-Source Voltage - Continuous

- Nonrepetitive (t_P< 50 µs)

V_GSS

±20

±30

I_D

Drain Current - Continuous

- Pulsed

-0.18

-0.12

-1

P_D

Maximum Power Dissipation T_A= 25°C

Derate above 25°C

0.8

0.36

2.9

mW/^oC

°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to 150

300

Maximum lead temperature for soldering

purposes, 1/16" from case for 10 seconds

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

200

350

°C/W

NDS0610.SAM

12 3 4 5 6 7...13

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