Datasheet > NDS331N

NDS331N

更新时间： 2024-11-25 12:19:27

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管 PC
页数	文件大小	规格书
3页	246K
描述
SUPERSOT-3

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NDS331N 数据手册

SMD Type

Product specification

NDS331N

General Description

Features

1.3 A, 20 V. R_DS(ON)= 0.21 W @ V_GS= 2.7 V

These N-Channel logic level enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage

applications in notebook computers, portable phones, PCMCIA

R_DS(ON)= 0.16 W @ V_GS= 4.5 V.

Industry standard outline SOT-23 surface mount package

using poprietary SuperSOT^TM-3 design for superior thermal

and electrical capabilities.

cards, and other

switching, and low in-line power loss are needed in a very

small outline surface mount package.

battery powered circuits where fast

High density cell design for extremely low R_DS(ON)

Exceptional on-resistance and maximum DC current

capability.

_______________________________________________________________________________

Absolute Maximum Ratings

T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GSS

I_D

Parameter

NDS331N

Units

Drain-Source Voltage

Gate-Source Voltage - Continuous

Maximum Drain Current - Continuous

- Pulsed

(Note 1a)

1.3

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.5

P_D

0.46

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

250

°C/W

(Note 1a)

(Note 1)

Thermal Resistance, Junction-to-Case

1 of 3

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